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參數(shù)資料
| 型號： | LS421-6 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| 中文描述： | 低漏低漂移整體式雙N溝道結(jié)型場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 26K |
| 代理商： | LS421-6 |
LS421, LS422, LS423,
LS424, LS425, LS426
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Integrated Systems
22 X 20 MILS
G1 S2
S1 G2
D2
D1
3 5
D1 D2
S1 G2
C
G1 S2
TO-78
BOTTOM VIEW
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
FEATURES
HIGH INPUT IMPEDANCE
I
G
=0.25pA MAX
gfs=120
μ
mho MIN
V
GS(off)
=2V MAX
HIGH GAIN
LOW POWER OPERATION
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
-V
DSO
-I
G(f)
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
-65
°
to +150
°
C
+150
°
C
Gate Voltage to Drain or Source
40V
Drain to Source Voltage
40V
Gate Forward Current
10mA
400mW @ +125
°
C
SYMBOL
BV
GSS
BV
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
MIN.
40
40
TYP.
60
--
MAX.
--
--
UNITS CONDITIONS
V
V
DS
= 0
V
I
G
= 1
μ
A
I
G
= 1nA
I
D
= 0
I
S
= 0
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Y
fss
Y
fs
300
120
--
200
1500
350
μ
mho
μ
mho
V
DS
= 10V
V
DG
= 10V
LS421-3
V
GS
= 0
I
D
= 30
μ
A
V
DS
= 10V
f= 1kHz
f= 1kHz
DRAIN CURRENT
60
--
1000
μ
A
V
GS
= 0
I
DSS
Full Conduction
60
--
1800
μ
A
LS424-6
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
|
V
GS1-2
/
T| max. Drift vs. Temperature
10
25
40
10
25
40
μ
V/
°
C
V
DG
= 10V I
D
= 30
μ
A
T
A
=-55
°
C to +125
°
C
V
DG
=10V
|V
GS1-2
| max.
Offset Voltage
GATE VOLTAGE
Pinchoff Voltage
10
15
25
10
15
25
mV
I
D
= 30
μ
A
V
GS(off)
V
GS
I
G
max.
-I
G
max.
-I
GSS
max.
-I
GSS
max.
2.0
2.0
2.0
3.0
3.0
3.0
V
V
DS
=10V
V
DG
=10V
V
DG
=10V
T
A
= +125
°
C
V
DS
= 0V
T
A
= +125
°
C
I
D
= 1nA
I
D
= 30
μ
A
I
D
= 30
μ
A
Operating Range
Operating
High Temperature
At Full Conduction
High Temperature
1.8
.25
250
1.0
1.0
1.8
.25
250
1.0
1.0
1.8
.25
250
1.0
1.0
2.9
.500
500
3.0
3.0
2.9
.500
500
3.0
3.0
2.9
.500
500
3.0
3.0
V
pA
pA
pA
nA
V
GS
= 20V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LS422 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS423 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS424 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS425 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS426 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LS422 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS423 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS424 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS424-01TG | 制造商:ADVANCED 功能描述:Connector, Dip Socket, 24 Pin, 0.4 Row Spacing, PC Mount |
| LS425 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
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