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參數資料
| 型號： | LS842 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET |
| 中文描述： | 低噪聲低漂移低電容整體式雙N溝道結型場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 32K |
| 代理商： | LS842 |
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
S1
3
BOTTOM VIEW
2
6
31 X 32 MILS
D1
G1
S2
S1
G2
D2
FEATURES
LOW NOISE
e
n
= 8nV/
√
Hz TYP.
I
G
= 10pA TYP.
|
V
GS1-2
/
T|= 5
μ
V/
°
C max.
IV
GS1-2
I= 2mV TYP.
LOW LEAKAGE
LOW DRIFT
LOW OFFSET VOLTAGE
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +150
°
C
+150
°
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
-V
DSO
-I
G(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
60V
60V
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125
°
C
G1
S2
G2
D1
D2
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
|
V
GS1-2
/
T| max. Drift vs. Temperature
LS840 LS841 LS842 UNITS CONDITIONS
5
10
40
μ
V/
°
C
V
DG
= 20V
T
A
= -55
°
C to +125
°
C
V
DG
= 20V
I
D
= 200
μ
A
|V
GS1-2
| max.
Offset Voltage
5
10
25
mV
I
D
= 200
μ
A
LS840 LS841 LS842
LOW NOISE LOW DRIFT
LOW CAPACITANCE
MONOLITHIC DUAL
N-CHANNEL JFET
SYMBOL
BV
GSS
BV
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Conduction
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
High Temperature
Reduced VDG
At Full Conduction
MIN. TYP. MAX. UNITS CONDITIONS
60
--
--
60
--
--
V
V
V
DS
= 0
I
G
= 1nA
I
D
= 1nA
I
D
= 0
I
S
= 0
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
1000
500
--
4000
1000
3
μ
mho
μ
mho
%
V
DG
= 20V
V
DG
= 20V
V
GS
= 0
I
D
= 200
μ
A
f= 1kHz
0.6
I
DSS
|I
DSS1-2
/I
DSS
|
0.5
--
2
1
5
5
mA
%
V
DG
= 20V
V
GS
= 0
V
GS
(off) or V
P
V
GS
1
0.5
2
--
4.5
4
V
V
V
DS
= 20V
V
DS
= 20V
I
D
= 1nA
I
D
= 200
μ
A
-I
G
-I
G
-I
G
-I
GSS
--
--
--
--
10
--
5
--
50
50
--
100
pA
nA
pA
pA
V
DG
= 20V
V
DG
= 20V
V
DG
= 10V
V
DG
= 20V
I
D
= 200
μ
A
I
D
= 200
μ
A
I
D
= 200
μ
A
V
DS
= 0
T
A
= +125
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| LS843-5 | ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS844 | ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS845 | ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS843 | ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS846 | LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LS842_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| LS842_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| LS842_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| LS842_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| LS842_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
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