
2002 Fairchild Semiconductor Corporation
May 2002
ISL9R30120G2 Rev. A
I
ISL9R30120G2
30A, 1200V Stealth
Diode
General Description
The ISL9R30120G2 is a Stealth diode optimized for low loss
performance in high frequency hard switched applications. The
Stealth family exhibits low reverse recovery current
(I
RM(REC)
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49415
.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t
b
/ t
a
> 4.5
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 56ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
o
C
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Ratings
1200
1200
1200
30
70
325
166
20
-55 to 150
Units
V
V
V
A
A
A
W
mJ
°C
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 80
o
C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
°C
°C
K
A
CATHODE
(BOTTOM SIDE
METAL)
CATHODE
ANODE
JEDEC STYLE 2 LEAD TO-247
Package
Symbol