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參數(shù)資料
| 型號(hào)： | LT1158IN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Half Bridge N-Channel Power MOSFET Driver |
| 中文描述： | HALF BRDG BASED MOSFET DRIVER, PDIP16 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-16 |
| 文件頁(yè)數(shù)： | 1/20頁(yè) |
| 文件大小： | 426K |
| 代理商： | LT1158IN |
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LT1158
1
Half Bridge N-Channel
Power MOSFET Driver
I
Drives Gate of Top Side MOSFET Above V
+
I
Operates at Supply Voltages from 5V to 30V
I
150ns Transition Times Driving 3000pF
I
Over 500mA Peak Driver Current
I
Adaptive Non-Overlap Gate Drives
I
Continuous Current Limit Protection
I
Auto Shutdown and Retry Capability
I
Internal Charge Pump for DC Operation
I
Built-In Gate Voltage Protection
I
Compatible with Current-Sensing MOSFETs
I
TTL/CMOS Input Levels
I
Fault Output Indication
A single input pin on the LT1158 synchronously controls
two N-channel power MOSFETs in a totem pole configura-
tion. Unique adaptive protection against shoot-through
currents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
A continuous current limit loop in the LT1158 regulates
short-circuit current in the top power MOSFET. Higher
start-up currents are allowed as long as the MOSFET V
DS
does not exceed 1.2V. By returning the fault output to the
enable input, the LT1158 will automatically shut down in
the event of a fault and retry when an internal pull-up
current has recharged the enable capacitor.
An on-chip charge pump is switched in when needed to
turn on the top N-channel MOSFET continuously. Special
circuitry ensures that the top side gate drive is safely
maintained in the transition between PWM and DC opera-
tion. The gate-to-source voltages are internally limited to
14.5V when operating at higher supply voltages.
FEATURES
DESCRIPTIO
N
U
Top and Bottom Gate Waveforms
+
–
+
+
R
0.015
500
μ
F
OW
ESR
0.1
μ
F
IRFZ34
IRFZ34
24V
1N4148
10
μ
F
1
μ
F
0.01
μ
F
PWM
0Hz TO
100kHz
BOOST
BOOST DR
V
+
V
+
INPUT
ENABLE
FAULT
BIAS
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
–
B GATE DR
B GATE FB
GND
LT1158
+
LOAD
LT1158 TA01
TYPICAL APPLICATIO
N
U
V
IN
= 24V
R
L
= 12
1158 TA02
I
PWM of High Current Inductive Loads
I
Half Bridge and Full Bridge Motor Control
I
Synchronous Step-Down Switching Regulators
I
Three-Phase Brushless Motor Drive
I
High Current Transducer Drivers
I
Battery-Operated Logic-Level MOSFETs
APPLICATIO
S
U
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1158C | Half Bridge N-Channel Power MOSFET Driver |
| LT1158CN | Half Bridge N-Channel Power MOSFET Driver |
| LT1158CS | Half Bridge N-Channel Power MOSFET Driver |
| LT1158I | Half Bridge N-Channel Power MOSFET Driver |
| LT1158IS | Half Bridge N-Channel Power MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1158IN#PBF | 功能描述:IC MOSFET DVR 1/2BRDG NCH 16DIP RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158IS | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver |
| LT1158ISW | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158ISW#PBF | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類(lèi)型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF) |
| LT1158ISW#TR | 功能描述:IC DRIVER PWR MOSFET N-CH 16SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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