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參數資料
| 型號： | LT1160IN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| 中文描述： | 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-14 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 347K |
| 代理商： | LT1160IN |
1
LT1160/LT1162
Half-/Full-Bridge
N-Channel
Power MOSFET Drivers
I
Floating Top Driver Switches Up to 60V
I
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
I
180ns Transition Times Driving 10,000pF
I
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
I
Top Drive Protection at High Duty Cycles
I
TTL/CMOS Input Levels
I
Undervoltage Lockout with Hysteresis
I
Operates at Supply Voltages from 10V to 15V
I
Separate Top and Bottom Drive Pins
The LT
1160/LT1162 are cost effective half-/full-bridge
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
FEATURES
DESCRIPTIO
N
U
I
PWM of High Current Inductive Loads
I
Half-Bridge and Full-Bridge Motor Control
I
Synchronous Step-Down Switching Regulators
I
3-Phase Brushless Motor Drive
I
High Current Transducer Drivers
I
Class D Power Amplifiers
APPLICATIO
S
U
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATIO
N
U
+
+
+
SV
+
PV
+
UV OUT
IN TOP
IN BOTTOM
14
13
12
11
9
8
1
10
4
2
3
BOOST
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
LT1160
1N4148
HV = 60V MAX
C
BOOST
1
μ
F
10
μ
F
25V
12V
PWM
0Hz TO 100kHz
1160 TA01
IRFZ44
IRFZ44
5
6
1000
μ
F
100V
SGND
PGND
IN TOPIN BOTTOMT GATE DRB GATE DR
L
L
L
H
H
L
H
H
L
L
H
L
L
H
L
L
相關PDF資料 |
PDF描述 |
|---|---|
| LT1160IS | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1161CSW | Quad Protected High-Side MOSFET Driver |
| LT1161ISW | Quad Protected High-Side MOSFET Driver |
| LT1167AC | TRANS NPN 50VCEO 1A TO-92L |
| LT1167IN8 | Precision Instrumentation Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LT1160IN#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS#TR | 功能描述:IC DRIVER PWR MOSFET N-CH 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS#TRPBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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