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參數資料
型號: LT4256-1IS8#TRPBF
廠商: Linear Technology
文件頁數: 14/16頁
文件大小: 213K
描述: IC CTRLR HOTSWAP HV LATCH 8SOIC
標準包裝: 2,500
類型: 熱交換控制器
應用: 通用
內部開關:
電源電壓: 10.8 V ~ 80 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOIC
包裝: 帶卷 (TR)
LT4256-1/LT4256-2
14
425612fa
APPLICATIO  S I FOR  ATIO
U
U
U
Figure 14. Negative Output Voltage Protection Diode Application
4256 F14
R5
0.033&
LT4256-1/
LT4256-2
SENSE
6
2
3
4
8
7
1
5
V
CC
GATE
FB
PWRGD
UV
TIMER
GND
V
IN
(SHORT PIN)
Q1
IRF530
D1
CMPZ5241B
11V
R2
8.06k
R1
64.9k
R7
100&
R9
4.02k
R6
10&
R8
36.5k
V
OUT
R4
27k
C
L
100礔
C2
33nF
C3
0.1礔
C1
10nF
GND
D2
SMAT70A
D3
MRA4003T3
UV = 36V
PWRGD = 40V
Notes on Using the LT4256 in LT1641 Applications
Even though the LT4256 and LT1641 have the same
pinout, several changes were made to improve overall
system accuracy and increase noise immunity. These
changes are spelled out in Table 1 and must be accounted
for if using the LT4256 in an LT1641 application.
Layout Considerations
To achieve accurate current sensing, a Kelvin connection
to the current sense resistor (R5 in typical application
circuit) is recommended. The minimum trace width for
1oz copper foil is 0.02" per amp to make sure the trace
stays at a reasonable temperature. 0.03" per amp or wider
is recommended. Note that 1oz copper exhibits a sheet
resistance of about 530?/O. Small resistances can
cause large errors in high current applications. Noise
immunity will be improved significantly by locating resis-
tor dividers close to the pins with short V
CC
 and GND
traces. A 0.1礔 decoupling capacitor from UV to GND is
also required.
Table 1. Differences Between LT1641 and LT4256
SPECIFICATION
LT1641
LT4256
COMMENTS
UV Threshold
1.313V
4V
Higher 1% Reference for Better Noise Immunity and System Accuracy
FB Threshold
1.233V
3.99V
Higher 1% Reference for Better Noise Immunity and System Accuracy
TIMER Current
?0%
?0%
More Accurate TIMEOUT
TIMER Shutdown V
1.233V
4.65V
Higher Trip Voltage for Better Noise Immunity
GATE I
PU
10礎
30礎
Higher Current to Accommodate Higher Leakage MOSFETs or Parallel Devices
GATE Resistor
1k&
100&
Different Compensation for Current Limit Loop
Foldback I
LIM
12mV
14mV
Slightly Different Current Limit Trip Point
I
LIM
 Threshold
47mV
55mV
Slightly Different Current Limit Trip Point
Fault Latch Reset
1.233V
0.85V
Better Noise Immunity
Threshold Voltage
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