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參數資料
| 型號： | LTTH806L |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 137K |
| 代理商： | LTTH806L |
LTTH806L
HYPER-FAST
GLASS PASSIVATED RECTIFIER
REVERSE VOLTAGE – 600Volts
FORWARD CURRENT – 8.0 Ampere
FEATURES
Soft, Hyper fast switching capability
Specially suited for critical mode Power Factor
Corrections.
High reliability and efficiency
MECHANICAL DATA
Case: JEDEC TO-220AC
Case Material: Plastic material, UL flammability
classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating
Polarity indicator: As marked on the body
Weight: 0.08 ounces, 2.24 grams
Component in accordance to RoHs 2002/95/EC
ESD capability : HBM_8KV (JESD22-A114)
Max. mounting torque =0.5 N.m (5.1 Kgf.cm)
TO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
LTTH806L
UNIT
Device marking code
Note
LTTH806L
---
Maximum Repetitive Peak Reverse Voltage
VRRM
600
V
Average Rectified Output Current @δ=0.5
See FIG.1
IF
8.0
A
Peak Forward Surge Current 8.3ms single half sine-wave
IFSM
120
A
Storage temperature range
TSTG
-55 to +150
°C
Operating junction temperature range
TJ
-55 to +150
°C
PARAMETER
TEST CONDITIONS
SYMBOL
Min.
Typ.
Max.
UNIT
Breakdown voltage
IR=8.0uA
Tj=25°C
VB
600
---
V
Forward Voltage (1)
IF=8.0A
Tj=25°C
Tj=150°C
VF
---
1.10
0.92
1.30
1.05
V
Leakage Current
VR=600V
Tj=25°C
Tj=150°C
IR
---
0.05
40
8.0
200
uA
Reverse recovery time
IF= 0.5A
Irr= 0.25A
IR =1.0A
Tj=25°C
trr
---
50
70
ns
THERMAL CHARACTERISTIC
SYMBOL
Typical
UNIT
Typical thermal resistance_Junction to Case
RΘJC
2.0
°C/W
Typical thermal resistance_Junction to Lead
RΘJL
3.0
°C/W
Note :
REV. 2, Oct-2008, KTGA21
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Thermal Resistance test performed in accordance with JESD-51. Rthj-L is measured at the PIN 2,
Rthj-C is measured at the top centre of body.
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