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參數(shù)資料
| 型號(hào)： | LX5506ELQ |
| 英文描述： | 8-Digit LED driver, 7-Segment, -40°C to +85°C, PDIP 24-pin |
| 中文描述： | 無(wú)線(xiàn)局域網(wǎng)功率放大器 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 272K |
| 代理商： | LX5506ELQ |
LX5503E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
W
M
.
C
InGaP HBT 4 – 6GHz Power Amplifier
I N T E G R A T E D P R O D U C T S
Copyright
2000
Rev. 1.0, 2003-02-12
D E S C R I P T I O N
The LX5503E is a power amplifier
optimized for high-efficiency low-
power applications in the FCC
Unlicensed
National
Infrastructure (U-NII) band, Europe
HyperLAN2, and Japan WLAN in the
4.9-5.85GHz frequency range. The
PA is implemented as a two-stage
monolithic
microwave
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction
Bipolar
(HBT) IC process (MOCVD). It
operates at a single supply of 3.3V
with +26dBm of P1dB, and power
gain of 21dB between 4.9-5.35GHz
and 16dB up to 5.85GHz.
Information
integrated
Transistor
For +18dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
very low EVM (Error Vector Mag-
nitude) of 3%, and consumes 150mA
total DC current.
The LX5503E is available in a 16-
pin
3x3mm
2
micro-lead
(MLP). The compact footprint, low
profile, and excellent thermal capability
of the micro-lead package make the
LX5503E
an
ideal
broadband, medium-gain power amp-
lifier requirements for IEEE 802.11a,
and
HiperLAN2
applications.
package
solution
for
portable
WLAN
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
Advanced InGaP HBT
4.9-5.85GHz Operation
Single-Polarity 3.3V Supply
Total Current ~ 150mA for
Pout=18dBm at 5.25GHz
P1dB ~ +26dBm across
4.9~5.85GHz
Power Gain ~ 21dB at 5.25GHz
& Pout=18dBm
Power Gain ~ 16dB at 5.85GHz
& Pout=18dBm
EVM ~ 3% for 64QAM/ 54Mbps
& Pout=18dBm
Excellent Temperature
Performance
Simple Input/Output Match
Minimal External Components
Optional low-cost LDO for
Optimal System Performance
Small Footprint: 3x3mm
Low Profile: 0.9mm
A P P L I C A T I O N S /B E N E F I T S
FCC-UNII Wireless
IEEE 802.11a
HiperLAN2
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
T
J
(
°
C)
LQ
Plastic MLPQ
16-Pin
LX5503E-LQ
0 to 70
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5503E-LQT)
L
X
5
5
0
3
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LX5506E-LQ | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 4 ?6GHz Power Amplifier |
| LX5506LQ | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Bulk |
| LX5506LQ-TR | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP T/R |
| LX5506M | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 4.5 – 6GHz Power Amplifier |
| LX5506M_09 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 4.5 – 6GHz Power Amplifier |
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