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參數(shù)資料
| 型號(hào)： | M11L416256SA-35JP |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 256 K x 16 DRAM EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 35 ns, PDSO40 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-44/40 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 280K |
| 代理商： | M11L416256SA-35JP |
EliteMT
M11L416256SA
DRAM
256 K x 16 DRAM
EDO PAGE MODE
FEATURES
y
X16 organization
y
EDO (Extended Data-Output) access mode
y
2
CAS
Byte/Word Read/Write operation
y
Single 3.3V (
10%) power supply
±
y
LVTTL-compatible inputs and outputs
y
512-cycle refresh in 8ms
y
Refresh modes :
RAS
only,
CAS
BEFORE
RAS
(CBR)
and HIDDEN capabilities
y
Self-refresh capability
y
JEDEC standard pinout
y
Key AC Parameter
Elite Memory Technology Inc
Publication Date
:
Aug. 2005
Revision
:
1.4
1/16
t
RAC
t
CAC
t
RC
t
PC
-35
35
10
65
14
ORDERING INFORMATION - PACKAGE
40-pin 400mil SOJ
44 / 40-pin 400mil TSOP (Type II)
PRODUCT NO.
PACKING
TYPE
COMMENTS
M11L416256SA-
35 TG
M11L416256SA-
35 JP
SOJ/TSOPII
Pb-free
GENERAL DESCRIPTION
The M11L416256 series is a randomly accessed solid state memory, organized as 262,144 x 16 bits device. It offers
Extended Data-Output , 3.3V(
10%) single power supply. Access time (-35) , self-refresh and package type (SOJ, TSOP II)
are optional features of this family. All these family have
CAS
- before -
RAS
,
RAS
-only refresh and Hidden refresh
capabilities.
Two access modes are supported by this device: Byte access and Word access. Use only one of the two
CAS
and leave
the other staying high will result in a BYTE access. WORD access happens when two
CAS
(
CASL
,
CASH
) are used.
CASL
transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and
CASH
transiting low will output or input data into the upper byte (IO8~15).
PIN ASSIGNMENT
SOJ Top View
±
TSOP (TypeII) Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
V
CC
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
CASL
CASH
OE
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
V
CC
40
39
38
37
36
35
34
33
32
31
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
CASL
CASH
OE
A8
A7
A6
A5
A4
V
SS
11
12
13
14
15
16
17
18
19
20
30
29
28
27
26
25
24
23
22
21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M11L416256SA-35TG | 256 K x 16 DRAM EDO PAGE MODE |
| M12L128168A | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-5T | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-6T | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-7T | 2M x 16 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M11L416256SA-35TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M-11-LID-PLATED | 功能描述:罩類、盒類及殼類產(chǎn)品 PLTD LID FOR M11 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級(jí): 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red |
| M11LRGSP | 制造商:Hubbell Wiring Device-Kellems 功能描述:MARINE SWITCH, SPST ON/OFF, LIGHTED |
| M11LRSP | 制造商:Hubbell Wiring Device-Kellems 功能描述:MARINE SWITCH, SPST ON/OFF, LIGHTED |
| M11LTR | 制造商:Hubbell Wiring Device-Kellems 功能描述:MARINE SWITCH, SPST ON/OFF, LIT TIP |
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