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參數資料
| 型號： | M1MA152WAT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Common Anode Silicon Dual Switching diodes |
| 中文描述： | 雙共陽極硅開關二極管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 81K |
| 代理商： | M1MA152WAT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC–59 package which is
designed for low power surface mount applications.
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151AT1
VR
40
Vdc
M1MA152AT1
80
Peak Reverse Voltage
M1MA151AT1
VRM
40
Vdc
M1MA152AT1
80
Forward Current
IF
IFM
100
mAdc
Peak Forward Current
225
mAdc
Peak Forward Surge Current
IFSM(1)
500
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
M1MA151AT1
IR
VR = 35 V
VR = 75 V
—
0.1
μ
Adc
M1MA152AT1
—
0.1
Forward Voltage
VF
VR
IF = 100 mA
IR = 100
μ
A
—
1.2
Vdc
Reverse Breakdown Voltage
M1MA151AT1
40
—
Vdc
M1MA152AT1
80
—
Diode Capacitance
CD
trr(2)
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100
, Irr = 0.1 IR
—
2.0
pF
Reverse Recovery Time
—
3.0
ns
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by M1MA151AT1/D
SEMICONDUCTOR TECHNICAL DATA
SC–59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
Motorola Preferred Devices
CASE 318D–03, STYLE 4
SC–59
2
1
3
ANODE
3
2
CATHODE
1
NO CONNECTION
REV 3
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PDF描述 |
|---|---|
| M1MA152AT1 | Single Silicon Switching Diodes |
| M1MA152KT1 | Single Silicon Switching Diodes |
| M2S12D20TP-10 | 128 x 64 pixel format, LED Backlight available |
| M2V12D20TP-10 | 128 x 64 pixel format, LED Backlight available |
| M2S12D30TP-10 | 128 x 64 pixel format, LED Backlight available |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M1MA152WAT1G | 功能描述:二極管 - 通用，功率，開關 80V 100mA RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| M1MA152WK | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Surface Mount Switching Diode |
| M1MA152WKLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WKLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WKT1 | 功能描述:二極管 - 通用，功率，開關 80V 100mA RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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