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參數資料
| 型號： | M27W801-200B6TR |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆x8低壓紫外線EPROM和檢察官辦公室存儲器 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 108K |
| 代理商： | M27W801-200B6TR |
1/16
April 2000
M27W801
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM
I
2.7V to 3.6V SUPPLY VOLTAGE in READ
OPERATION
I
ACCESS TIME:
– 80ns at V
CC
= 3.0V to 3.6V
– 100ns at V
CC
= 2.7V to 3.6V
I
PIN COMPATIBLE with M27C801
I
LOW POWER CONSUMPTION:
– 15
μ
A max Standby Current
– 15mA max Active Current at 5MHz
I
PROGRAMMING TIME 50
μ
s/byte
I
HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 42h
DESCRIPTION
The M27W801 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storageand is organized as 1,048,576by
8 bits.
The M27W801 operates in the read mode with a
supply voltageas low as 2.7V at –40 to 85
°
C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lids which allow the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27W801 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
Figure 1. Logic Diagram
AI02363
20
A0-A19
Q0-Q7
VCC
M27W801
VSS
8
GVPP
E
1
32
FDIP32W (F)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
32
1
PDIP32 (B)
相關PDF資料 |
PDF描述 |
|---|---|
| M27W801-200F6TR | 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W801-200K6TR | CAP,1uF,50VDC,20-% Tol,20+% Tol |
| M27W801-200N6TR | 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M28R400CB100D16 | Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CB-KGD | Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M27W801-200C6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W801-200F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W801-200K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W801-200N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W801-80K6 | 功能描述:可擦除可編程ROM 8M (1Mx8) 80ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
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