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參數資料
| 型號： | M28R400CT100D16 |
| 廠商： | 意法半導體 |
| 英文描述： | Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| 中文描述： | 已知良品裸片4兆位（256Kb的x16插槽，引導塊）1.8V電源快閃記憶體 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 356K |
| 代理商： | M28R400CT100D16 |
1/11
June 2004
M28R400CT-KGD
M28R400CB-KGD
Known Good Die
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
–
V
DD
= 1.65V to 2.2V Core Power Supply
–
V
DDQ
= 1.65V to 2.2V for Input/Output
–
V
PP
= 12V for fast Program (optional)
ACCESS TIME: 100ns
PROGRAMMING TIME
–
10μs typical
–
Double Word Programming Option
COMMON FLASH INTERFACE
–
64 bit Security Code
MEMORY BLOCKS
–
Parameter Blocks (Top or Bottom
location)
–
Main Blocks
BLOCK LOCKING
–
All blocks locked at Power Up
–
Any combination of blocks can be locked
–
WP for Block Lock-Down
SECURITY
–
64 bit user Programmable OTP cells
–
64 bit unique device identifier
–
One Parameter Block Permanently
Lockable
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Top Device Code, M28R400CT: 882Ah
–
Bottom Device Code, M28R400CB:
882Bh
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Figure 1. Delivery Form
Wafer
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| M28R400CT120ZB6T | 制造商:Micron Technology Inc 功能描述: |
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