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參數資料
| 型號： | M29W040B70NZ1F |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統一座低電壓單電源閃存 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 161K |
| 代理商： | M29W040B70NZ1F |
1/20
September 2005
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
■
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 55ns
■
PROGRAMMING TIME
– 10s per Byte typical
■
8 UNIFORM 64 Kbytes MEMORY BLOCKS
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
■
ECOPACK PACKAGES AVAILABLE
TSOP32 (N)
8 x 20mm
PLCC32 (K)
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
AI02953
19
A0-A18
W
DQ0-DQ7
VCC
M29W040B
G
E
VSS
8
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相關代理商/技術參數 |
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|---|---|
| M29W040B70NZ1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70NZ6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70NZ6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70NZ6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70NZ6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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