- 您現在的位置：買賣IC網 > PDF目錄370829 > M2V56S40TP-7 (Mitsubishi Electric Corporation) 128 x 64 pixel format, LED Backlight available PDF資料下載
參數資料
| 型號： | M2V56S40TP-7 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 128 x 64 pixel format, LED Backlight available |
| 中文描述： | 256M同步DRAM |
| 文件頁數： | 1/49頁 |
| 文件大小： | 244K |
| 代理商： | M2V56S40TP-7 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁
Feb.2000
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.1)
Single Data Rate
M2V56S20/ 30/ 40/ TP -6, -7, -8
256M Synchronous DRAM
1
M2V56S20TP is a 4-bank x 16777216-word x 4-bit,
M2V56S30TP is a 4-bank x 8388608-word x 8-bit,
M2V56S40TP is a 4-bank x 4194304-word x 16-bit,
synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge
of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz
(-6), and are suitable for main memory or graphic memory in computer systems.
- Single 3.3v
±
0.3V power supply
- Max. Clock frequency 100MHz(-7/-8), 133MHz (-6)
- Fully Synchronous operation referenced to clock rising edge
- Single Data Rate
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/full page (programmable)
- Burst type- sequential / interleave (programmable)
- Random column access
- Auto precharge / All bank precharge controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
Some of contents are subject to change without notice.
DESCRIPTION
FEATURES
Standard
PC100 (CL3)
PC100 (CL2)
PC133 (CL3)
133MHz
100MHz
77MHz
100MHz
100MHz
100MHz
M2V56S20/30/40TP-8
M2V56S20/30/40TP-7
M2V56S20/30/40TP-6
Max. Frequency
@CL3
Max. Frequency
@CL2
相關PDF資料 |
PDF描述 |
|---|---|
| M2V56S30AKT | 256M Synchronous DRAM |
| M2V56S30ATP | 256M Synchronous DRAM |
| M2V56S30ATP-5 | 256M Synchronous DRAM |
| M2V56S40AKT | 256M Synchronous DRAM |
| M2V56S40ATP | 256M Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M2V56S40TP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V64S20BTP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM |
| M2V64S20BTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM |
| M2V64S20BTP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM |
| M2V64S20BTP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM |
發布緊急采購，3分鐘左右您將得到回復。