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參數資料
| 型號： | M2V64S40DTP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 64M Synchronous DRAM |
| 中文描述： | 6400同步DRAM |
| 文件頁數： | 1/52頁 |
| 文件大小： | 674K |
| 代理商： | M2V64S40DTP |
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Apr. '99
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.2)
M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)
64M bit Synchronous DRAM
1
DESCRIPTION
The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is
organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x
1048576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are
referenced to the rising edge of CLK. The M2V64S20BTP, M2V64S30BTP, M2V64S40BTP
achieve very high speed data rate up to 125MHz, and are suitable for main memory or
graphic memory in computer systems.
FEATURES
- Single 3.3v ± 0.3v power supply
- Clock frequency 125MHz /100MHz
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Burst Write / Single Write (programmable)
- Auto precharge / All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A9 (x4), A0-A8(x8), A0-A7(x16)
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
Max.
Frequency
CLK Access
Time
M2V64S20BTP
M2V64S30BTP
M2V64S40BTP
125MHz
6ns
100MHz(CL3)
6ns
-8A
100MHz(CL2)
6ns
-7, -7L
-8, -8L
-10, -10L
100MHz
8ns
相關PDF資料 |
PDF描述 |
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| M2V64S40DTP-6 | 64M Synchronous DRAM |
| M2V64S40DTP-6L | 64M Synchronous DRAM |
| M2V64S40DTP-7 | 64M Synchronous DRAM |
| M2V64S40DTP-7L | 64M Synchronous DRAM |
| M2V64S40DTP-8 | 64M Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M2V64S40DTP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM |
| M2V64S40DTP-6L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM |
| M2V64S40DTP7 | 制造商:MITSUBISHI 功能描述:New |
| M2V64S40DTP-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM |
| M2V64S40DTP-7L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM |
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