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參數資料
| 型號： | M36L0R7050U1ZAME |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| 中文描述： | 128兆位（復用的I / O，多銀行，多層次，多突發）快閃記憶體，32或64兆移動存儲芯片，1.8V電源多芯片封裝 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 118K |
| 代理商： | M36L0R7050U1ZAME |
Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
June 2006
Rev 1
1/22
1
M36L0R7060U1 M36L0R7060L1
M36L0R7050U1 M36L0R7050L1
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash
memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
Feature summary
■
Multi-Chip Package
– 1 die of 128 Mbit (8Mb x16, Mux I/O
Multiple Bank, Multi-level, Burst) Flash
Memory
– 1 die of 32 or 64Mbit Mux I/O, Burst
Pseudo SRAM
■
Supply voltage
– V
DDF
= V
DDP
= V
DDQF
= 1.7 to 1.95V
– V
PPF
= 9V for fast program
■
Electronic signature
– Manufacturer Code: 20h
– Device Codes (Top Flash Configuration):
M36L0R7060U1: 882Eh,
M36L0R7050U1: 882Eh
– Device Codes (Bottom Flash Configuration)
M36L0R7060L1: 882Fh
M36L0R7050L1: 882Fh
■
ECOPACK package
Flash memory
■
Multiplexed address/data
■
Synchronous / asynchronous read
– Synchronous Burst Read mode: 66MHz
– Random Access: 85ns
■
Synchronous burst read suspend
programming time
– 10μs typical Word program time using
Buffer Enhanced Factory Program
command
■
Memory organization
– Multiple Bank Memory Array: 8 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■
100,000 program/erase cycles per block
■
Dual operations
– program/erase in one Bank while read in
others
– No delay between Read and Write
operations
■
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
■
Common Flash Interface (CFI)
PSRAM
■
Access time: 70ns
■
Synchronous modes:
– Synchronous Write: continuous burst
– Synchronous Read: continuous burst or
fixed length: 4, 8 or 16 Words for 32 Mbit
devices or 4, 8,16 or 32 Words for 64 Mbit
devices
– Maximum Clock Frequency: 83MHz
■
Low power consumption
■
Low power features
– Partial Array Self-Refresh (PASR)
– Deep Power-Down (DPD) Mode
– Automatic Temperature-compensated Self-
Refresh
TFBGA88 (ZAM)
8 x 10mm
FBGA
www.st.com
相關PDF資料 |
PDF描述 |
|---|---|
| M36L0R7050U1ZAMF | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7060L1 | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7060L1ZAME | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7060L1ZAMF | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7060U1 | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M36L0R7050U1ZAMF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7050U3ZSE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 160M |
| M36L0R7050U3ZSF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel 制造商:Micron Technology Inc 功能描述:FLASH |
| M36L0R7050U3ZSF TR | 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 160M |
| M36L0R7060B1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package |
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