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參數(shù)資料
| 型號： | M38227M8MXXXGP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Schottky barrier single diodes - C<sub>d</sub> max.: 2@VR=1V pF; Configuration: single ; I<sub>F</sub> max: 120 mA; I<sub>FSM</sub> max: 200 A; I<sub>R</sub> max: 0.5@VR=30VA; V<sub>F</sub>max: 370@IF=1mA mV; V<sub>R</sub> max: 40 V |
| 中文描述： | 單肖特基勢壘二極管--Cdmax:2@VR=1V pF;結(jié)構(gòu)：單；IFmax: 120 mA；IFSMmax: 200 A；IRmax:0.5@VR=30VA； VFmax.: 370@IF=1mA mV；VRmax: 40 V |
| 文件頁數(shù)： | 1/78頁 |
| 文件大小： | 998K |
| 代理商： | M38227M8MXXXGP |
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DESCRIPTION
The 3822 group is the 8-bit microcomputer based on the 740 fam-
ily core technology.
The 3822 group has the LCD drive control circuit, an 8-channel
A-D converter, and a serial I/O as additional functions.
The various microcomputers in the 3822 group include variations
of internal memory size and packaging. For details, refer to the
section on part numbering.
For details on availability of microcomputers in the 3822 group, re-
fer to the section on group expansion.
FEATURES
qBasic machine-language instructions ...................................... 71
qThe minimum instruction execution time ........................... 0.5 s
(at 8 MHz oscillation frequency)
qMemory size
ROM ................................................................. 4 K to 48 K bytes
RAM ................................................................. 192 to 1024 bytes
qProgrammable input/output ports ............................................ 49
qSoftware pull-up/pull-down resistors (Ports P0-P7 except port P40)
qInterrupts ................................................. 17 sources, 16 vectors
(includes key input interrupt)
qTimers ........................................................... 8-bit 3, 16-bit 2
qSerial I/O ...................... 8-bit 1 (UART or Clock-synchronized)
qA-D converter ................................................. 8-bit 8 channels
qLCD drive control circuit
Bias ................................................................................... 1/2, 1/3
Duty ........................................................................... 1/2, 1/3, 1/4
Common output .......................................................................... 4
Segment output ........................................................................ 32
q2 clock generating circuits
(connect to external ceramic resonator or quartz-crystal oscillator)
qPower source voltage
In high-speed mode .................................................. 4.0 to 5.5 V
In middle-speed mode ............................................... 2.5 to 5.5 V
(Extended operating temperature version:
2.0 to 5.5 V, Ta= – 20 to 85°C
3.0 to 5.5 V, Ta= – 40 to – 20°C)
(One time PROM version: 2.5 to 5.5 V)
(M version: 2.2 to 5.5 V)
(H version: 2.0 to 5.5 V)
In low-speed mode .................................................... 2.5 to 5.5 V
(Extended operating temperature version:
2.0 to 5.5 V, Ta= – 20 to 85°C
3.0 to 5.5 V, Ta= – 40 to – 20°C)
(One time PROM version: 2.5 to 5.5 V)
(M version: 2.2 to 5.5 V)
(H version: 2.0 to 5.5 V)
qPower dissipation
In high-speed mode .......................................................... 32 mW
(at 8 MHz oscillation frequency, at 5 V power source voltage)
In low-speed mode ............................................................ 45
W
(at 32 kHz oscillation frequency, at 3 V power source voltage)
qOperating temperature range................................... – 20 to 85°C
(Extended operating temperature version: – 40 to 85 °C)
APPLICATIONS
Camera, household appliances, consumer electronics, etc.
Fig. 1 M38224M6HXXXFP pin configuration
(The pin configuration of 80D0 is same as this.)
PIN CONFIGURATION (TOP VIEW)
Package type : 80P6N-A (80-pin plastic-molded QFP)
3822 Group
MITSUBISHI MICROCOMPUTERS
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
S
E
G
8
S
E
G
9
P
3
4
/S
E
G
1
2
P
3
5
/S
E
G
1
3
P
0
/S
E
G
1
6
P
0
3
/S
E
G
1
9
P
0
4
/S
E
G
2
0
P
0
5
/S
E
G
2
1
P
0
6
/S
E
G
2
P
0
7
/S
E
G
2
3
P
1
/S
E
G
2
5
P
1
2
/S
E
G
2
6
P
1
3
/S
E
G
2
7
P
1
4
/S
E
G
2
8
P
1
5
/S
E
G
2
9
P
1
6
/S
E
G
3
0
P
1
7
/S
E
G
3
1
V
L
1
P
6
7
/A
N
7
M38224M6HXXXFP
P
5
7
/A
D
T
P
5
0
/I
N
T
2
P
4
6
/S
C
L
K
P
4
5
/T
X
D
P
4
3
/I
N
T
1
P
4
2
/I
N
T
0
AVSS
VREF
VCC
SEG0
P41/
φ
P40
XIN
XOUT
VSS
P27
P26
P25
P24
P23
P22
P21
P20
RESET
P
5
1
/I
N
T
3
P
5
/C
N
T
R
1
P
5
4
/C
N
T
R
0
P
5
3
/R
T
P
1
P
5
2
/R
T
P
0
P
5
6
/T
O
U
T
P
1
0
/S
E
G
2
4
P
0
1
/S
E
G
1
7
P
0
2
/S
E
G
1
8
P
4
7
/S
R
D
Y
S
E
G
1
0
S
E
G
1
P
3
6
/S
E
G
1
4
P
3
7
/S
E
G
1
5
P70/XCOUT
P71/XCIN
COM0
VL3
P
6
/A
N
6
P
6
5
/A
N
5
P
6
4
/A
N
4
P
6
3
/A
N
3
P
6
2
/A
N
2
P
6
1
/A
N
1
P
6
0
/A
N
0
V
L
2
COM1
COM2
COM3
SEG1
SEG2
SEG3
SEG4
SEG5
SEG6
SEG7
P
4
/R
X
D
1
2
3 4
56789 101112 1314151617181920 2122 2324
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
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76
77
78
79
80
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M38227M8MXXXHP | Schottky barrier single diodes - C<sub>d</sub> max.: 2@VR=1V pF; Configuration: single ; I<sub>F</sub> max: 120 mA; I<sub>FSM</sub> max: 200 A; I<sub>R</sub> max: 0.5@VR=30VA; V<sub>F</sub>max: 370@IF=1mA mV; V<sub>R</sub> max: 40 V |
| M38227M8XXXFS | NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us |
| M38227M8XXXGP | Wideband variable gain amplifier - Dual: yes ; GBW product: 850 MHz; Input noise: 2.5 pA/sqrt(Hz); Operating temperature: -40~85 Cel; PSRR: 45 mV/V; Single supply: 4.5 to 7 V<sub>DC</sub> |
| M38227M8XXXHP | Transimpedance amplifier (140MHz) - Amplifier type: Transimpedance ; BW: 140@-3dB MHz; Input noise: 2.5 pA/sqrt(Hz); Operating temperature: -40 to +85 Cel; Part type: Amplifier, Transimpedance ; Power dissipation: 350 mW; PSRR: 23 dB; Single supply voltage: 5 VDC; Slew rate: N/G V/us |
| M38227M9DXXXFS | Postamplifier with link status indicator - Amplifier type: Post-Amp System ; ESD protection: Y kV; Operating frequency: 75 MHz; Operating temperature: -40 to +85 Cel; Part type: Amplifier, Post-amp System ; Power dissipation: 350 mW; Remarks: Link status threshold &hysteresis programmable ; Supply voltage, analog part, V<sub>DDA</sub>: 5 V; Supply voltage, digital part, V<sub>DD</sub>: 5 V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M38227RFS | 制造商:Renesas Electronics Corporation 功能描述:MCU - Trays |
| M3823 BK001 | 制造商:Alpha Wire Company 功能描述:CBL 30COND 18AWG BLK 1000' |
| M3823 BK002 | 制造商:Alpha Wire Company 功能描述:CBL 30COND 18AWG BLK 500' |
| M3823 BK005 | 制造商:Alpha Wire Company 功能描述:CBL 30COND 18AWG BLK 100' |
| M38234G4FP#U0 | 功能描述:MCU 2/5V 16K 80-QFP QZ-ROM RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:740/38000 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設(shè)備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲(chǔ)器容量:- 程序存儲(chǔ)器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR) |
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