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參數(shù)資料
型號(hào): M54577P
廠商: Mitsubishi Electric Corporation
英文描述: 7 UNIT 30MA TRANSISTOR ARRAY
中文描述: 7單元30mA的晶體管陣列
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 36K
代理商: M54577P
Jan.2000
Unit :
The seven circuits share the V
CC
and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
10k
22k
100k
23k
INPUT
OUTPUT
GND
V
CC
16P4(P)
IN7
7
10
IN5
5
12
INPUT
OUTPUT
IN4
4
13
IN3
3
IN2
2
15
1
IN1
16
GND
V
CC
9
8
IN6
6
11
O1
O2
O3
O4
O5
O6
O7
14
Package type
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54577P
7-UNIT 30mA TRANSISTOR ARRAY
DESCRIPTION
M54577P is seven-circuit transistor arrays. The circuits are
made of NPN transistors. The semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
G
Medium breakdown voltage (BV
CEO
30V)
G
Output sink current (I
C(max)
= 30mA)
G
Driving available with MOS (PMOS, CMOS) IC output
G
Low output saturation voltage (V
CE(sat)
= 0.35V at I
C
= 20mA)
G
Wide operating temperature range (Ta = –20 to +75
°
C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps)
FUNCTION
The M54577P has seven circuits consisting of NPN transistor.
This I
C
uses a predriver stage with a diode and 23k
resistor
in series to input. The output transistor emitters are all con-
nected to the GND pin (pin 8), and V
CC
is connected to pin 9.
The collector current are capable of sinking 30mA maximum.
Collector-emitter supply voltage is 30V maximum.
Collector-emitter saturation voltage is below 0.35V (I
C
=
20mA) Drives active “H” input.
CIRCUIT DIAGRAM
V
CC
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
V
V
mA
V
W
°
C
°
C
13
–0.5 ~ +30
30
–20 ~ V
CC
1.47
–20 ~ +75
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Output, H
Current per circuit output, L
Ta = 25
°
C, when mounted on board
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