- 您現在的位置：買賣IC網 > PDF目錄354216 > M58MR032C100ZC6T (意法半導體) 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數資料
| 型號： | M58MR032C100ZC6T |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復用的I / O，雙行，突發1.8V電源快閃記憶體 |
| 文件頁數： | 1/52頁 |
| 文件大?。?/td> | 396K |
| 代理商： | M58MR032C100ZC6T |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
1/52
PRELIMINARY DATA
August 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M58MR032C
M58MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
s
SUPPLY VOLTAGE
–VDD = VDDQ = 1.7V to 2.0V for Program,
Erase and Read
–VPP = 12V for fast Program (optional)
s
MULTIPLEXED ADDRESS/DATA
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Burst mode Read: 40MHz
– Page mode Read (4 Words Page)
– Random Access: 100ns
s
PROGRAMMING TIME
– 10s by Word typical
– Two or four words programming option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 8/24 Mbit
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
PROTECTION/SECURITY
– All Blocks protected at Power-up
– Any combination of Blocks can be protected
– 64 bit unique device identifier
– 64 bit user programmable OTP cells
– One parameter block permanently lockable
s
COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58MR032C: 88DAh
– Bottom Device Code, M58MR032D: 88DBh
FBGA
TFBGA48 (ZC)
10 x 4 ball array
Figure 1. Logic Diagram
AI90019
5
A16-A20
W
ADQ0-ADQ15
VDD
M58MR032C
M58MR032D
E
VSS
16
G
RP
WP
VDDQ VPP
L
K
WAIT
BINV
相關PDF資料 |
PDF描述 |
|---|---|
| M58MR064C100ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M28W320FSU-ZAF | 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories |
| M28W320FSU-ZAE | 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories |
| M27C1024-70N7TR | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| M27C1024-80N7TR | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M58MR032C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
發布緊急采購，3分鐘左右您將得到回復。