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參數資料
| 型號： | M58MR064-ZCT |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復用的I / O，雙行，突發1.8V電源快閃記憶體 |
| 文件頁數： | 1/52頁 |
| 文件大小： | 399K |
| 代理商： | M58MR064-ZCT |
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March 2002
M58MR064C
M58MR064D
64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
s
SUPPLY VOLTAGE
–VDD =VDDQ = 1.65V to 2.0V for Program,
Erase and Read
–VPP = 12V for fast Program (optional)
s
MULTIPLEXED ADDRESS/DATA
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Burst mode Read: 54MHz
– Page mode Read (4 Words Page)
– Random Access: 100ns
s
PROGRAMMING TIME
– 10s by Word typical
– Two or four words programming option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 16/48 Mbit
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
PROTECTION/SECURITY
– All Blocks protected at Power-up
– Any combination of Blocks can be protected
– 64 bit unique device identifier
– 64 bit user programmable OTP cells
– One parameter block permanently lockable
s
COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58MR064C: 88DCh
– Bottom Device Code, M58MR064D: 88DDh
FBGA
TFBGA48 (ZC)
10 x 4 ball array
Figure 1. Logic Diagram
AI90087
6
A16-A21
W
ADQ0-ADQ15
VDD
M58MR064C
M58MR064D
E
VSS
16
G
RP
WP
VDDQ VPP
L
K
WAIT
BINV
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