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參數資料
| 型號： | M58WR064 |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，多銀行，突發1.8V電源快閃記憶體 |
| 文件頁數： | 1/82頁 |
| 文件大小： | 1100K |
| 代理商： | M58WR064 |
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FEATURES SUMMARY
s
SUPPLY VOLTAGE
–VDD = 1.65V to 2.2V for Program, Erase and
Read
–VDDQ = 1.65V to 3.3V for I/O Buffers
–VPP = 12V for fast Program (optional)
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100 ns
s
PROGRAMMING TIME
– 8s by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
s
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
s
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s
COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR064ET: 8810h
– Bottom Device Code, M58WR064EB: 8811h
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
相關PDF資料 |
PDF描述 |
|---|---|
| M58WR064EB | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064EB70ZB6T | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128EB | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128EB70ZB6T | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M58WR064B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064B100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064B70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064B85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064EB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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