- 您現在的位置：買賣IC網 > PDF目錄354178 > M58WR064ETZB (意法半導體) 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數資料
| 型號： | M58WR064ETZB |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，多銀行，突發1.8V電源快閃記憶體 |
| 文件頁數： | 1/82頁 |
| 文件大小： | 1100K |
| 代理商： | M58WR064ETZB |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁
1/82
FEATURES SUMMARY
s
SUPPLY VOLTAGE
–VDD = 1.65V to 2.2V for Program, Erase and
Read
–VDDQ = 1.65V to 3.3V for I/O Buffers
–VPP = 12V for fast Program (optional)
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100 ns
s
PROGRAMMING TIME
– 8s by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
s
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
s
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s
COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR064ET: 8810h
– Bottom Device Code, M58WR064EB: 8811h
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
相關PDF資料 |
PDF描述 |
|---|---|
| M58WR064E-ZBT | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M27C1024-90F7TR | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| M27C1024-10F7TR | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| M27C1024-20F7TR | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| M50FW080N1 | 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M58WR064E-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064FB60ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR064FB60ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR064FB60ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR064FB60ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
發布緊急采購，3分鐘左右您將得到回復。