- 您現在的位置：買賣IC網 > PDF目錄354180 > M58WR128ET70ZB6T (意法半導體) 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數資料
| 型號： | M58WR128ET70ZB6T |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 128兆位和8Mb × 16，多銀行，突發1.8V電源快閃記憶體 |
| 文件頁數： | 1/87頁 |
| 文件大?。?/td> | 1113K |
| 代理商： | M58WR128ET70ZB6T |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁
1/87
PRODUCT PREVIEW
This is preliminary information on a new product now in development. Details are subject to change without notice.
FEATURES SUMMARY
s
SUPPLY VOLTAGE
–VDD = 1.65V to 2.2V for Program, Erase and
Read
–VDDQ = 1.65V to 3.3V for I/O Buffers
–VPP = 12V for fast Program (optional)
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100ns
s
SYNCHRONOUS BURST READ SUSPEND
s
PROGRAMMING TIME
– 8s by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
s
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
s
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s
COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR128ET: 881Eh
– Bottom Device Code, M58WR128EB: 881Fh
VFBGA60 (ZB)
12.5 x 12mm
FBGA
相關PDF資料 |
PDF描述 |
|---|---|
| M95040MN | 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95040-BN3G | 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95040-BN3P | 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95040-BN3T | 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95040-BN3TG | Replaced by SN74ABT377A : Octal Edge-Triggered D-Type Flip-Flops With Clock Enable 20-SSOP -40 to 85 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M58WR128ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ETZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128E-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WT032KB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32- and 64-Mbit (】16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories |
| M58WT032KT | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32- and 64-Mbit (】16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories |
發布緊急采購，3分鐘左右您將得到回復。