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參數(shù)資料
| 型號： | M5M28F101AFP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS閃存 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 96K |
| 代理商： | M5M28F101AFP |
MIMITSUBISHI LSIs
101048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M28F101AFP,J,VP,RV-85,-10
(970407)
1
DESCRIPTION
The MITSUBISHI M5M28F101A is high-speed 1048576-bit CMOS
Flash Memories. This is suitable for the applications with micro-
processor or micro-controller where on-board reprogramming is
required. The M5M28F101A is fabricated by N-channel double
polysilicon gate for memory and CMOS technology for peripheral
circuits, and is available in 32pin plastic molded packages.
FEATURES
Speed item
85 ns (max.)
Speed item
.......................................................
100 ns (max.)
Power supply voltage
...................................
V
CC
= 5V±0.5V
Write and erase voltage
V
PP
= 12V±0.6V
Byte program and Chip erase
Auto program and Auto erase
Program/erase operation controlled by software command
Program/erase pulse controlled by an embedded timer
10000 program/erase cycles
Tri-state output buffer
TTL-compatible input and output in read and write mode
Contained device-identifier code
Incorporated data-protection
Available packaging for Surface Mount
PIN CONFIGURATION (TOP VIEW)
Outline 525mil 32pin SOP (32P2M-A)
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
D
0
D
1
D
2
A
14
A
13
A
9
A
11
OE
NC
A
16
A
15
A
12
V
PP
A
10
CE
D
7
D
6
D
5
D
4
D
3
1
2
3
4
5
6
7
8
9
10
32
31
30
29
28
26
25
23
11
12
22
21
WE
ADDRESS
INPUTS
ADDRESS
INPUTS
27
24
13
20
14
19
GND
NC : NO CONNECTION
A
8
WRITE ENABLE
INPUT
V
CC
APPLICATION
Micro-computer system and peripheral equipment
15
18
16
17
M
OUTPUTS
DATA INPUTS/
OUTPUT
ENABLE INPUT
ADDRESS INPUT
CHIP ENABLE
INPUT
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
D
0
5
6
7
8
9
10
11
12
4
3
2
1
3
3
3
29
28
27
26
25
24
23
22
13
21
1
1
1
1
1
1
2
Outline 32pin PLCC (32P0)
A
14
A
13
A
8
A
9
A
11
OE
A
10
CE
D
7
A
1
A
1
A
1
V
P
V
C
W
N
D
1
D
2
G
M5M28F101AJ
Outline 32pin TSOP type-I (8x20mm)
32P3H-F (reverse bend)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A
4
A
5
A
6
A
7
A
12
A
15
A
16
V
PP
CC
V
NC
A
14
A
13
A
8
A
9
A
11
A
3
A
2
A
1
A
0
D
0
D
1
D
GND
D
3
D
4
D
5
D
6
D
7
CE
A
10
OE
M5M28F101ARV
Outline 32pin TSOP type-I (8x20mm)
32P3H-E (normal bend)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
11
A
9
A
8
A
13
A
14
NC
WE
V
CC
V
PP
A
16
A
15
A
12
A
7
A
6
A
5
A
4
OE
A
10
CE
D
7
D
6
D
5
D
4
D
GND
D
2
D
1
D
0
A
0
A
1
A
2
A
3
M5M28F101AVP
OUTPUTS
INPUTS/
DATA
........................................................
................................
D
6
D
5
D
4
D
3
相關(guān)PDF資料 |
PDF描述 |
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| M5M29FB800FP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M28F101J12 | 制造商:MITS 功能描述:28F010-120 S8H2A |
| M5M28F101J-12 | 制造商:MITS 功能描述:28F010-120 S8H2A |
| M5M28F101J-15 | 制造商:Mitsubishi Electric 功能描述: |
| M5M29F25611VP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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