- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370969 > M5M29FT800RV-80 (Mitsubishi Electric Corporation) 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | M5M29FT800RV-80 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 8,388,608位（1048,576 - 576 - Word的8位/ 524,288字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 151K |
| 代理商： | M5M29FT800RV-80 |
MIMITSUBISHI LSIs
CCMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
1
1
DESCRIPTION
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for
mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for
the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin
TSOP(I).
FEATURES
Organization 524,288 word x 16bit
1,048,576 word x 8 bit
Supply voltage
................................
V
CC
= 3.3V±0.3V
Access time 80/100/120ns (Max)
Power Dissipation
Read 108 mW (Max.)
Program/Erase 144 mW (Max.)
Standby 0.72 mW (Max.)
Deep power down mode 3.3μW (typ.)
Auto program
Program Time 7.5ms (typ.)
Program Unit 128word
Auto Erase
Erase time 50 ms (typ.)
Erase Unit
Boot Block 8Kword / 16Kbyte x 1
Parameter Block 4Kword / 8Kbyte x 2
Main Block 16Kword / 32Kbyte x 1
32Kword / 64Kbyte x 15
Program/Erase cycles 100Kcycles
PIN CONFIGURATION (TOP VIEW)
Boot Block
M5M29FB800 Bottom Boot
M5M29FT800 Top Boot
Other Functions
Software Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Sleep
Package
48-Lead, 12mmx 20mm TSOP (type-I)
44-Lead SOP
APPLICATION
Code Storage PC BIOS
Digital Cellular Phone/Telecommunication
8,8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
M5M29FB/T800FP,VP,RV-80,-10,-12
NC : NO CONNECTION
RV(Reverse bend): 48P3R-C
Outline 48pin TSOP type-I (12 X 20mm)
VP(Normal bend): 48P3R-B
This product is compatible with HN29WB/T800 by Hitachi Ltd.
1
2
3
4
5
6
7
8
9
10
44
43
42
41
40
38
37
35
11
12
34
33
39
36
13
14
32
31
15
30
16
29
M
17
28
18
27
19
26
20
25
Outline 600mil 44-pin SOP
(FP: 44P2A-A)
21
24
22
23
A
15
A
16
/BYTE
A
12
A
13
A
14
A
10
A
11
DQ
5
DQ
12
DQ
4
V
CC
A
8
A
9
/WE
GND
DQ15/A-1
/RP
DQ
13
DQ
6
DQ
7
DQ
14
/CE
GND
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
8
DQ
1
DQ
9
DQ
2
DQ
10
DQ
3
DQ
11
A
17
A
18
/OE
ADDRESS
INPUTS
ADDRESS
INPUTS
CHIP ENABLE
BYTE ENABLE
RESET/
WRITE ENABLE
DATA
DATA
OUTPUT ENABLE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
/BYTE
GND
DQ
15
/A-1
RY/BY
NC
A
11
A
10
A
9
A
8
NC
NC
/WE
M5M29FB/T800VP
A
15
A
14
A
0
17
18
19
20
28
27
26
25
0
/OE
21
22
23
24
48
47
46
45
A
13
A
12
/CE
/RP
A
1
A
2
DQ
8
1
DQ
9
DQ
2
CC
DQ
11
10
DQ
3
V
4
DQ
12
DQ
5
13
DQ
6
DQ
14
DQ
7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
RY/BY
A
18
A
17
A
7
A
6
A
5
A
4
A
3
M5M29FB/T800RV
A
15
A
14
A
13
A
12
17
18
19
20
28
27
26
25
21
22
23
24
48
47
46
45
GND
/CE
A
0
A
1
A
2
NC
/RP
A
11
A
10
A
9
A
8
NC
NC
0
/OE
DQ
8
1
DQ
9
2
CC
DQ
11
GND
DQ
10
DQ
3
V
4
DQ
12
5
DQ
13
DQ
6
14
DQ
7
DQ
15
/A-1
A
/BYTE
NC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FT800FP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800VP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BWG | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT161BWG | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FT800VP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800VP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800VP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。