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參數資料
| 型號： | M5M29GB640C3TXAI-12 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:23; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-99 RoHS Compliant: No |
| 中文描述： | 3.3只FLASHMEMORY |
| 文件頁數： | 1/7頁 |
| 文件大小： | 635K |
| 代理商： | M5M29GB640C3TXAI-12 |
1
M5M29GB640VP
3.
3V ONLY FLASH MEMORY
64
-bit Protection Register
Latch-up protected to 100mA from -1V to VCC+1V
- 48-pin TSOP (12mm x 20mm)
FEATURES
sectors), 4Kword x 6 (parameter sectors), 32Kword x
7 (parameter sectors)
- Top Boot
Auto Erase (chip & sector) and Auto Program
- Automatically program and verify data at specified
address
A15
A14
A13
A12
A11
A10
A9
A8
A21
A20
WE
RP
NC
WP
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
VCCQ
GND
Q15
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE
GND
CE
A0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
M5M29GB640VP
67,108,864-BIT(8,388,608 - WORD BY 8-BIT / 4,194,304 - WORD BY 16-BIT)
Automatic Suspend Enhance
- Word/byte write suspend to read
- Sector erase suspend to word/byte write
- Sector erase suspend to read register report
Automatic sector erase, full chip erase, word write and
sector lock/unlock configuration
Status Reply
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
Data Protection Performance
- Include boot sectors and parameter and main sectors
to be block/unblock
100,000 minimum erase/program cycles
Common Flash Interface (CFI)
Package type:
Single power supply operation
- 3.0V only operation for read, erase and program
operation
- VCC=VPP=2.7~3.6V
- VCC=12 fast production programming
- 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ)
- Operating temperature:-40
°
C~85
°
C
Fast access time : 90/120ns
Low power consumption
- 9mA maximum active read current, f=5MHz (CMOS
input)
- 21mA program erase current maximum
(VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
Sector architecture
- Sector Erase (Sector structure : 4Kword x 2 (boot
1
FEATURES
相關PDF資料 |
PDF描述 |
|---|---|
| M5M29GB640C3BXAI-12 | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3TTC-12 | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3TTC-90 | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3TTI-12 | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3TTI-90 | 3.3V ONLY FLASHMEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M5M29GB640C3TXAI-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.3V ONLY FLASHMEMORY |
| M5M29GB640VP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.3V ONLY FLASHMEMORY |
| M5M29GT160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT160BVP-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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