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參數資料
| 型號： | M5M44260CTP-5S |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| 中文描述： | 快速頁面模式4194304位（262144字由16位）動態隨機存儲器 |
| 文件頁數： | 1/29頁 |
| 文件大小： | 283K |
| 代理商： | M5M44260CTP-5S |
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FAFAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CJ,TP-5,-6,-7,
MIMITSUBISHI LSIs
M5M44260CJ,TP-5,-5S : Under development
This is a family of 262144-word by 16-bit dynamic RAMs,
fabricated with the high performance CMOS process, and is ideal
for memory systems where high speed, low power dissipation, and
low costs are essential.
The use of double-layer metalization process technology and a
single-transistor dynamic storage stacked capacitor cell provide
high circuit density at reduced costs. Multiplexed address inputs
permit both a reduction in pins and an increase in system
densities. Self or extended refresh current is small enough for
battery back-up application.
This device has 2CAS and 1W terminals with a refresh cycle of
512 cycles every 8.2ms.
1
DESCRIPTION
FEATURES
Standard 40pin SOJ, 44 pin TSOP (II)
Single 5V±10% supply
Low stand-by power dissipation
CMOS Input level 5.5mW (Max)
CMOS Input level 550μW (Max) *
Operating power dissipation
M5M44260Cxx-5,-5S 688mW (Max)
M5M44260Cxx-6,-6S 605mW (Max)
M5M44260Cxx-7,-7S 523mW (Max)
Self refresh capability *
Self refresh current 150μA (Max)
Extended refresh capability
Extended refresh current 150μA (Max)
Fast-page mode (512-column random access), Read-modify-write,
RAS-only refresh, CAS before RAS refresh, Hidden refresh
capabilities.
Early-write mode, LCAS / UCAS and OE to control output buffer
impedance
512 refresh cycles every 8.2ms (A
0
~A
8
)
512 refresh cycles every 128ms (A
0
~A
8
) *
Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S
: option) only
XX=J,TP
Type name
RAS
(time
50
CAS
(time
13
(time
25
access
time
(min.ns)
90
Cycle
Power
(typ.mW)
625
tion
M5M44260CXX-7,-7S
M5M44260CXX-6,-6S
60
70
15
20
30
35
110
130
550
475
15
20
aOE
(time
13
M5M44260CXX-5,-5S
APPLICATION
Microcomputer memory, Refresh memory for CRT
PIN CONFIGURATION (TOP VIEW)
1
9
2
3
4
5
11
10
12
13
40
39
38
37
36
30
32
31
29
28
DQ
1
A
0
A
1
A
2
A
3
(5V)V
CC
V
SS
(0V)
NC
A
8
A
7
A
6
A
5
A
4
W
RAS
UCAS
OE
Outline 40P0K (400mil SOJ)
6
7
8
35
34
33
16
18
17
19
20
14
15
25
23
24
22
21
27
26
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
(5V)V
CC
(5V)V
CC
NC
NC
LCAS
NC
DQ
12
DQ
11
DQ
10
DQ
9
V
SS
(0V)
DQ
16
DQ
15
DQ
14
DQ
13
V
SS
(0V)
1
9
2
3
4
5
13
10
14
15
44
43
42
41
40
32
36
35
31
30
DQ
1
A
0
A
1
A
2
A
3
(5V)V
CC
V
SS
(0V)
NC
A
8
A
7
A
6
A
5
A
4
W
RAS
UCAS
OE
Outline 44P3W-R (400mil TSOP Nomal Bend)
6
7
8
39
38
37
18
20
19
21
22
16
17
27
25
26
24
23
29
28
DQ
2
DQ
3
DQ4
DQ
5
DQ
6
DQ
7
DQ
8
(5V)V
CC
(5V)V
CC
NC
NC
LCAS
NC
DQ
12
DQ
11
DQ
10
DQ
9
V
SS
(0V)
DQ
16
DQ
15
DQ
14
DQ
13
V
SS
(0V)
NC: NO CONNECTION
-5S,-6S,-7S
PIN DESCRIPTION
Pin name
A
0
~A
8
DQ
1
~DQ
16
RAS
UCAS
W
OE
V
CC
V
SS
Function
Address inputs
Data inputs / outputs
Row address strobe input
Lower byte control
column address strobe input
Upper byte control
column address strobe input
Write control input
Output enable input
Power supply (+5V)
Ground (0V)
LCAS
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相關代理商/技術參數 |
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| M5M44260CTP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-6S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-7S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44265CJ | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
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