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參數(shù)資料
| 型號(hào)： | M5M4V64S30ATP-12 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| 中文描述： | 64M號(hào)（4銀行甲2097152字× 8位）同步DRAM |
| 文件頁(yè)數(shù)： | 1/51頁(yè) |
| 文件大小： | 1161K |
| 代理商： | M5M4V64S30ATP-12 |
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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
M5M4V64S20ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
SDRAM (Rev.1.3)
Mar98
DESCRIPTION
The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit
Synchronous DRAM, with LVTTL interface. All inputs and
outputs are referenced to the rising edge of CLK. The
M5M4V64S20ATP achieves very high speed data rate up to
125MHz, and is suitable for main memory or graphic memory
in computer systems.
FEATURES
- Single 3.3v±0.3v power supply
- Clock frequency 125MHz /100MHz
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Burst Write / Single Write (programmable)
- Auto precharge / All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A9
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with
0.8mm lead pitch
Some of contents are subject to change without notice.
CLK
CKE
/CS
/RAS
/CAS
/WE
DQ0-3
DQM
A0-11
BA0,1
Vdd
VddQ
Vss
VssQ
: Master Clock
: Clock Enable
: Chip Select
: Row Address Strobe
: Column Address Strobe
: Write Enable
: Data I/O
: Output Disable/ Write Mask
: Address Input
: Bank Address
: Power Supply
: Power Supply for Output
: Ground
: Ground for Output
Max.
Frequency
CLK Access
Time
M5M4V64S30ATP-8A
125MHz
6ns
1
M5M4V64S30ATP-10
100MHz
8ns
M5M4V64S30ATP-8
100MHz
6ns
PIN CONFIGURATION
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
4
Vdd
NC
VddQ
NC
DQ0
VssQ
NC
NC
VddQ
NC
DQ1
VssQ
NC
Vdd
NC
/WE
/CAS
/RAS
/CS
BA0(A13)
BA1(A12)
A10
A0
A1
Vss
NC
VssQ
NC
DQ3
VddQ
NC
NC
VssQ
NC
DQ2
VddQ
NC
Vss
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
A2
A3
Vdd
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M4V64S30ATP-8 | 30V N-Channel PowerTrench MOSFET |
| M5M4V64S30ATP-8A | Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85 |
| M5M4V64S30ATP-8L | Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85 |
| M5M4V64S40ATP-10 | 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
| M5M4V64S40ATP-10L | 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V64S30ATP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S40ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
| M5M4V64S40ATP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
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