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參數資料
| 型號： | M5M51016RT-12VL |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（65536字由16位）的CMOS靜態RAM |
| 文件頁數： | 1/7頁 |
| 文件大小： | 75K |
| 代理商： | M5M51016RT-12VL |
MITSUBISHI LSIs
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M51016BTP,RT-12VL,
-12VLL
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A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CS
NC
(0V)GND
OE
NC
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
AINPUTS
CHIP SEINPUT
OUTPUT EINPUT
INDATA
OUTPUTS
BC
1
BC
2
A
14
A
15
A
13
W
A
8
A
9
A
11
A
10
GND(0V)
NC
DQ
16
DQ
15
DQ
14
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
NC
V
CC
(5V)
BYTE
CONTROL
ADDRESS
INPUTS
WRITE
INPUTS
ADDRESS
INPUTS
DATA
INPUTS/
OUTPUTS
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2
3
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5
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7
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25
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23
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CS
GND(0V)
OE
NC
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
NC
BC
1
BC
2
A
14
A
15
A
13
W
A
8
A
9
A
11
A
10
NC
(0V)GND
NC
DQ
16
DQ
15
DQ
14
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
(5V)V
CC
INDATA
OUTPUTS
ADDRESS
INPUTS
ADDRESS
INPUTS
COBYTE
INPUTS
WRITE
CINPUTS
ADDRESS
INPUTS
CHIP SELECT
OUTPUT ENABLE
DATA
INPUTS/
Outline 44P3W - H (400mil TSOP Normal Bend)
PIN CONFIGURATION (TOP VIEW)
NC : NO CONNECTION
DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM
organized as 65536 word by 16-bit which are fabricated using
high-performance triple polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery result in a high
density and low power static RAM.
They are low stand-by current and low operation current and ideal
for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small
outline package which is a high reliability and high density surface
mount device (SMD). Two types of devices are available.
M5M51016BTP(normal lead bend type package), M5M51016BRT
(reverse lead bend type package). Using both types of devices, it
becomes very easy to design a printed circuit board.
FEATURES
M5M51016BTP,RT-12VLL
Single +3.0V power supply
Low stand-by current 0.3μA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by CS, BC
1
& BC
2
Data hold on +2V power supply
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51016BTP,RT
APPLICATION
Small capacity memory units
M5M51016BTP,RT-12VL
Type name
Access time
(max)
Active
(max)
stand-by
(max)
60μA
(V
CC
= 3.6V)
12μA
(V
CC
= 3.6V)
0.3μA
(V
CC
= 3.0V,
typ)
12mA
(1MHz)
Power supply current
120ns
120ns
44pin 400mil TSOP(II)
..............................
M
M
1
Outline 44P3W - J (400mil TSOP Reverse Bend)
相關PDF資料 |
PDF描述 |
|---|---|
| M5M51016RT-12VLL | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-12VLL-I | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-12VL | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-12VLL | Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 |
| M5M51016BTP-12VLL-I | Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M5M51016RT-12VL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-12VLL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-12VLL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-70L-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-70LL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
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