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參數資料
| 型號： | M5M5256DRV-70VXL-I |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| 中文描述： | 262144位（32768 - Word的8位）的CMOS靜態RAM |
| 文件頁數： | 1/7頁 |
| 文件大小： | 62K |
| 代理商： | M5M5256DRV-70VXL-I |
MITSUBISHI LSIs
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M5256DFP,VP,RV -70VLL,-85VLL,
-70VXL,-85VXL
'97.4.7
PACKAGE
M5M5256DFP : 28 pin 450 mil SOP
M5M5256DVP,RV : 28pin 8 X 13.4 mm TSOP
Single +3.3±0.3V power supply
No clocks, no refresh
Data-Hold on +2.0V power supply
Directly TTL compatible : all inputs and outputs
Three-state outputs : OR-tie capability
/OE prevents data contention in the I/O bus
Common Data I/O
Battery backup capability
Low stand-by current··········0.05μA(typ.)
APPLICATION
Small capacity memory units
DESCRIPTION
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
Especially the M5M5256DVP,RV are packaged in a 28-pin thin
small outline package.Two types of devices are available,
M5M5256DVP(normal lead bend type package),
M5M5256DRV(reverse lead bend type package). Using both types of
devices, it becomes very easy to design a printed circuit board.
FEATURE
PIN CONFIGURATION (TOP VIEW)
1
12μA
(Vcc=3.6V)
(Vcc=3.6V)
0.05μA
2.4μA
(max)
Stand-by
(max)
Active
(max)
Power supply current
Type
M5M5256DFP,VP,RV-70VLL
Access
time
70ns
25mA
(Vcc=3.6V)
M5M5256DFP,VP,RV-85VLL
85ns
M5M5256DFP,VP,RV-70VXL
70ns
M5M5256DFP,VP,RV-85VXL
85ns
(Vcc=3.0V,
M
1
2
3
A14
A12
A7
4
5
6
7
8
9
10
11
12
13
14
Outline 28P2W-C (DFP)
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
28 Vcc
27 /W
26 A13
25 A8
24 A9
23 A11
22 /OE
21 A10
20 /S
19
DQ8
DQ7
DQ6
DQ5
DQ4
18
17
16
15
M5M5256DVP
1 A14
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
8
A2
9
A1
10
A0
11
DQ1
12
DQ2
13
DQ3
14
GND
Vcc
28
A13
/W
26
27
A8
25
A9
24
A11
23
/OE
22
A10 21
/S20
DQ8 19
DQ7 18
DQ6 17
DQ5 16
DQ415
M5M5256DRV
A14
Vcc
/W
A12
A6
A7
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
DQ4
A10
DQ7
DQ8
DQ6
DQ5
A13
A8
A9
A11
/OE
/S
Outline 28P2C-A (DVP)
Outline 28P2C-B (DRV)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
3
2
4
5
6
7
8
9
10
11
12
13
14
相關PDF資料 |
PDF描述 |
|---|---|
| M5M5256DFP-70XL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DFP-85VLL | Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 |
| M5M5256DFP-85VLL-I | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DFP-85VXL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-70VLL-W | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M5M5256DRV-70XL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-85VLL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-85VLL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-85VXL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-85VXL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
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