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參數資料
| 型號： | M5M5V108CKR-10H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS靜態RAM |
| 文件頁數： | 1/7頁 |
| 文件大小： | 86K |
| 代理商： | M5M5V108CKR-10H |
MITSUBISHI LSIs
M5M5V108CFP,VP,RV,KV,KR -70H, -10H,
-70X, -10X
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
NC : NO CONNECTION
DESCRIPTION
The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS
static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance quadruple-polysilicon and
double metal CMOS technology. The use of thin film transistor
(TFT) load cells and CMOS periphery result in a high density and
low power static RAM.
They are low standby current and low operation current and ideal
for the battery back-up application.
The M5M5V108CVP,RV,KV,KR are packaged in a 32-pin thin
small outline package which is a high reliability and high density
surface mount device(SMD). Two types of devices are available.
M5M5V108CVP,KV(normal lead bend type package),
M5M5V108CRV,KR(reverse lead bend type package).Using both
types of devices, it becomes very easy to design a printed circuit
board.
FEATURES
Type name
Access
time
(max)
Active
(1MHz)
(max)
stand-by
(max)
Power supply current
Package
M5M5V108CFP
············
32pin 525mil SOP
M5M5V108CVP,RV
············
32pin 8 X 20 mm TSOP
M5M5V108CKV,KR
············
32pin 8 X 13.4 mm TSOP
APPLICATION
Small capacity memory units
Low stand-by current 0.1μA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S
1
,S
2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
M5M5V108CFP,VP,RV,KV,KR-70H
M5M5V108CFP,VP,RV,KV,KR-10H
M5M5V108CFP,VP,RV,KV,KR-70X
M5M5V108CFP,VP,RV,KV,KR-10X
4.8μA
70ns
100ns
70ns
100ns
5mA
2.7~3.6V
12μA
V
CC
1
16
15
14
13
1
12
11
10
9
8
7
6
5
4
3
2
PIN CONFIGURATION (TOP VIEW)
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
1
DQ
2
DQ
3
GND
V
CC
A
15
S
2
W
A
13
A
8
A
9
A
11
OE
A
10
S
1
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
A
11
A
9
A
8
A
13
W
S
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
OE
A
10
S
1
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
GND
DQ
3
DQ
2
DQ
1
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
12
A
11
A
2
A
1
A
0
DQ
1
DQ
2
DQ
3
GND
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
S
1
A
10
OE
A
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
17
18
19
20
32
M5M5V108CVP,KV
A
14
A
16
NC
V
CC
A
15
S
2
W
A
13
A
8
A
9
21
22
23
24
25
26
27
28
29
30
31
Outline 32P2M-A
Outline 32P3H-E(VP), 32P3K-B(KV)
ADDRESS
INPUT
CHIP SELECT
INPUT
WRITE CONTROL
INPUT
ADDRESS
INPUTS
OUTPUT ENABLE
INPUT
ADDRESS
INPUT
CHIP SELECT
INPUT
DATA
INPUTS/
OUTPUTS
ADDRESS
INPUTS
DATA
INPUTS/
OUTPUTS
M5M5V108CRV,KR
Outline 32P3H-F(RV), 32P3K-C(KR)
相關PDF資料 |
PDF描述 |
|---|---|
| M5M5V108CKR-10X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-70H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-70X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CFP-10H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CFP-10X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M5M5V108CKR-10HI | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-10X | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-10XI | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-70H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-70HI | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
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