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參數(shù)資料
| 型號(hào)： | M5M5V208VP-12LL-W |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM |
| 中文描述： | 2097152位（262144 - Word的8位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 88K |
| 代理商： | M5M5V208VP-12LL-W |
MITSUBISHI LSIs
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
'97.3.21
PACKAGE
M5M5V208FP : 32 pin 525 mil SOP
M5M5V208VP,RV : 32pin 8 X 20 mm2 TSOP
M5M5V208KV,KR : 32pin 8 X 13.4 mm2 TSOP
Single 2.7 ~ 3.6V power supply
W-version: operating temperature of -20 to +70°C
No clocks, No refresh
All inputs and outputs are TTL compatible.
Easy memory expansion and power down by S1 & S2
Data retention supply voltage=2.0V
Three-state outputs: OR-tie capability
OE prevents data contention in the I/O bus
Common Data I/O
Battery backup capability
Small stand-by current · · · · · · · · · · 0.3μA(typ.)
APPLICATION
Small capacity memory units
Battery operating system
Handheld communiation tools
DESCRIPTION
The M5M5V208 is 2,097,152-bit CMOS static RAM organized as
262,144-words by 8-bit which is fabricated using high-performance
quadruple-polysilicon and double metal CMOS technology. The use
of thin film transistor(TFT) load cells and CMOS periphery results in a
high density and low power static RAM. The M5M5V208 is designed
for memory applications where high reliability, large storage, simple
interfacing and battery back-up are important design objectives.
The M5M5V208VP,RV,KV,KR are packaged in a 32-pin thin small
outline package which is a high reliability and high density surface
mount device(SMD).Two types of devices are available.
VP,KV(normal lead bend type package),RV,KR(reverse lead bend
type package). Using both types of devices, it becomes very easy to
design a printed circuit board.
FEATURE
PIN CONFIGURATION (TOP VIEW)
1
Outline 32P2M-A(FP)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
17
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
1
DQ
2
DQ
3
(0V)
GND
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
(3V)
A
15
S
2
W
A
13
A
8
A
9
A
11
OE
A
10
S
1
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
DQ4
M5M5V208RV,KR
-W
A
4
A
5
A
6
A
7
A
12
A
14
A
16
A
Vcc
A
15
S
2
W
A
13
A
8
A
9
A
11
A
2
A
1
A
DQ1
DQ2
GND
DQ5
DQ6
DQ7
DQ8
S
1
A
10
OE
A
3
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
M5M5V208VP,KV
-W
A
11
A
9
A
8
A
13
W
S
2
A
Vcc
A
17
A
16
A
14
A
12
A
7
A
6
A
5
A
4
OE
A
10
S
DQ8
DQ7
DQ6
DQ5
DQ4
GND
DQ3
DQ2
DQ1
A
0
A
1
A
2
A
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
60μA
(Vcc=3.6V)
10μ A
(Vcc=3.6V)
(max)
Stand-by
(max)
Active
(max)
Power supply current
Type
M5M5V208FP,VP,RV,KV,KR-70L
M5M5V208FP,VP,RV,KV,KR-85L
M5M5V208FP,VP,RV,KV,KR-10L
M5M5V208FP,VP,RV,KV,KR-12L
M5M5V208FP,VP,RV,KV,KR-70LL
M5M5V208FP,VP,RV,KV,KR-85LL
M5M5V208FP,VP,RV,KV,KR-10LL
M5M5V208FP,VP,RV,KV,KR-12LL
Access
time
70ns
85ns
100ns
120ns
70ns
85ns
100ns
120ns
27mA
(Vcc=3.6V)
Outline 32P3H-E(VP), 32P3K-B(KV)
Outline 32P3H-F(RV), 32P3K-C(KR)
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PDF描述 |
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| M5M5V208VP-70LL-W | 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5V216AWG-55H | 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V216AWG-55HI | 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5V208VP-12L-W | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5V208VP-70L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5V208VP-70LL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5V208VP-70LL-W | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5V208VP-70L-W | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM |
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