- 您現在的位置：買賣IC網 > PDF目錄380303 > M9130 (Intersil Corporation) 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs PDF資料下載
參數資料
| 型號： | M9130 |
| 廠商： | Intersil Corporation |
| 英文描述： | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 第6A，- 100V的，0.550歐姆，拉德硬，P通道功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | M9130 |
4-1
FRM9130D, FRM9130R,
FRM9130H
6A, -100V, 0.550 Ohm, Rad Hard,
P-Channel Power MOSFETs
File Number
3262.2
Package
TO-204AA
Symbol
D
G
S
Features
6A, -100V, RDS(on) = 0.550
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 1.50nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Gamma Dot
Photo Current
Neutron
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m
. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-
rent limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRM9130D, R, H
-100
-100
UNITS
V
V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
6
4
A
A
A
V
18
±
20
75
30
0.60
18
6
18
W
W
W/
o
C
A
A
A
o
C
-55 to +150
300
o
C
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關PDF資料 |
PDF描述 |
|---|---|
| M9132 | SPEAKER DRIVER 128 NOTES MELODY |
| M9280 | VDD CONTROL |
| M948B | 768 NOTES 1 KEY 24 TUNES |
| MA-322 | LOW-NOISE WIDEBAND OPREATIONAL AMPLIFIER |
| MA-322-CP | LOW-NOISE WIDEBAND OPREATIONAL AMPLIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M9131 | 制造商:Tamura Corporation of America 功能描述: |
| M9132 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SPEAKER DRIVER 128 NOTES MELODY |
| M9134 | 制造商:Tamura Corporation of America 功能描述: |
| M9136 | 功能描述:塑料硬件 NLN M25 BLACK RoHS:否 制造商:3M Electronic Specialty 類型:Cylindrical Bumpers |
| M9139 | 制造商:Tamura Corporation of America 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。