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參數資料
| 型號： | MA160 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Switching Diodes |
| 中文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT, MINI4-G1, SC-61, 4 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 89K |
| 代理商： | MA160 |
Switching Diodes
MA4X160
(MA160)
Silicon epitaxial planar type
1
Publication date: November 2003
SKF00044AED
For high-speed switching circuits
■
Features
Two isolated elements are contained in one package, allowing
high-density mounting
Centrosymmetrical wiring, allowing to free from the taping direction
Short reverse recovery time t
rr
Small terminal capacitance C
t
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
40
V
Forward current
Single
I
F(AV)
100
mA
(Average)
Double
75
Repetitive peak
Single
I
FRM
225
mA
forward current
Double
170
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current
*
Double
375
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
R
I
F
=
100 mA
I
R
=
100
μ
A
V
R
=
35 V
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
0.95
1.20
V
Reverse voltage
40
V
Reverse current
I
R
0.1
μ
A
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
0.9
2.0
pF
3
ns
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Internal Connection
4
1
3
2
Note)*: t
=
1 s
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
EAIJ: SC-61
Mini4-G1 Package
Unit: mm
Marking Symbol: M1D
2.90
+0.02
0.16
+0.1
0
±
0
5
10
0.60
+0.10
1
+
–
1
+
–
1
+
–
2
+
–
1.9
±
0.2
(
(0.2)
(0.95)
(0.95)
0
3
4
2
1
0.5R
Note) The part number in the parenthesis shows conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
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