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參數資料
| 型號： | MA4E2508M-1112T |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封裝： | CASE 1112, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 99K |
| 代理商： | MA4E2508M-1112T |
SURMOUNTTM Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1
V2
MA4E2508 Series
Features
Extremely Low Parasitic Capitance and
Inductance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
Lower Susceptibility to ESD Damage
Description and Applications
The MA4E2508 SurMount
Anti-Parallel Diode Series
are Silicon Low, Medium & High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process. HMIC
circuits consist of Silicon pedestals which form
diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss,
microstrip transmission medium. The combination of
silicon and glass allows HMIC devices to have
excellent loss and power dissipation characteristics
in a low profile, reliable device.
The
Surmount
Schottky
devices
are
excellent
choices for circuits requiring the small parasitics of a
beam
lead
device
coupled
with
the
superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They
have
lower
susceptibility
to
electrostatic
discharge than conventional beam lead Schottky
diodes.
The
multi-layer
metalization
employed
in
the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all
devices
to
be
subjected
to
a
16-hour
non-operating stabilization bake at 300
°C.
The “ 0502 ” outline allows for Surface Mount
placement and multi- functional polarity orientations.
Case Style 1112
Dim
Inches
Millimeters
Min.
Max.
Min.
Max.
A
0.0445
0.0465
1.130
1.180
B
0.0169
0.0189
0.430
0.480
C
0.0040
0.0080
0.102
0.203
D Sq.
0.0128
0.325
E
0.0128
0.0148
0.325
0.375
0.0148
0.375
A
A
B
C
D
E
D
Equivalent Circuit
The MA4E2508 Family of SurMount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount
diode, which can be connected to a hard or soft
substrate circuit with solder.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MA4E2508M-1112W | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair |
| MA4E2508MSP-T | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair |
| MA4E2513 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNT Low Barrier Tee “0301” Footprint Silicon Schottky Diodes |
| MA4E2513-1289 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNT Low Barrier Tee “0301” Footprint Silicon Schottky Diodes |
| MA4E2513L-1289 | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
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