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參數資料
| 型號： | MA4T85635 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MICRO-X-4 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 120K |
| 代理商： | MA4T85635 |
Specifications Subject to Change Without Notice
M/A-COM Inc.
North America: Tel. (800) 366-2266
Asia/Pacific:
Tel. +85 2 2111 8088
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
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Fax +44 (1344) 300-020
Moderate Power High fT
NPN Silicon Transistor
MA4T856 Series
V3.00
Features
High Output Power
- 16 dBm P1dB @ 1 GHz
- 10 dBm P1dB @ 2 GHz
High Gain Bandwidth Product
8-9 GHz fT
High Power Gain
- |S21E|
2 = 15 dB @ 1 GHz
- |S21E|
2 = 9 dB @ 2 GHz
Low Noise Figure
- 1.5 dB @ 1.5 GHz
Description
The MA4T856 series of moderate power NPN transistors
provides low noise at 5-10 volts operating voltage.
These
transistors are designed to optimize gain at moderate collector
currents (20 - 60 mA).
They are useful as moderate power (+23-24 dBm) low noise
amplifiers at 0.5-2 GHz or as low noise VCO transistors from
100 MHz to 5.0 GHz.
These inexpensive transistors are available in the SOT-23
(M4T85633), the SOT-143 (MA4T85639), and the Micro-X
(MA4T85635) packages.
They are also available as chips
(MA4T85600) for hybrid circuits. The plastic packages SOT-
23 and SOT-143 are normally supplied on tape and reel.
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Collector-Base Voltage
20 V
Collector-Emitter Voltage
12 V
Emitter-Base Voltage
3.0 V
Collector Current
100 mA
Junction Temperature
Chip or Ceramic Package
+200°C
Plastic Package
+150°C
Storage Temperature
Chip or Ceramic Package
-65°C to +200°C
Plastic Package
-65°C to +200°C
Power Dissipation (die)
1200 mW
1
1. See power derating curves.
Package Outline
SOT-23
SOT-143
Chip
Micro-X
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