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參數資料
| 型號： | MA6S718 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | SILICON, L BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT, SMINI6-F1, SC-88, 6 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 38K |
| 代理商： | MA6S718 |
1
Schottky Barrier Diodes (SBD)
MA6S718
Silicon epitaxial planar type
For switching circuits
I
Features
Small S-mini type 6-pin package
Non connected three elements incorporated in one package,
allowing high-density mounting
Flat lead type package, resulting in promotion of the actual
mounting ratio and solderability with a high-speed mounter
Optimum for low-voltage rectification because of its low forward
rise voltage (V
F
)
Optimum for high-frequency rectification because of its short re-
verse recovery time (t
rr
)
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
30
V
Peak reverse voltage
V
RM
I
FM
I
F
30
V
Peak forward current
*
150
mA
Forward current (DC)
*
30
mA
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
4 : Cathode 3
5 : Cathode 2
6 : Cathode 1
S-Mini Type Package (6-pin)
Internal Connection
Marking Symbol: M2N
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F1
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f
= 1 MHz
1
μ
A
Forward voltage (DC)
0.4
V
V
F2
C
t
1
V
Terminal capacitance
1.5
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
1
ns
Detection efficiency
η
V
in
= 3 V
(peak)
, f
= 30 MHz
R
L
= 3.9 k
, C
L
= 10 pF
65
%
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Applicaiton Unit N-50BU
1 : Anode 1
2 : Anode 2
3 : Anode 3
2.1
±
0.1
1.25
±
0.1
2
±
0
0
0
0
±
0
0
±
0
1
4
6
3
5
2
1
2
3
6
5
4
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) * : Value in per diode
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相關代理商/技術參數 |
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| MA6X121 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA6X12100L | 功能描述:DIODE SWITCH 80V 100MA MINI 6P RoHS:是 類別:分離式半導體產品 >> 二極管，整流器 - 陣列 系列:- 其它有關文件:STTH10LCD06C View All Specifications 標準包裝:1,000 系列:- 電壓 - 在 If 時為正向 (Vf)（最大）:2V @ 5A 電流 - 在 Vr 時反向漏電:1µA @ 600V 電流 - 平均整流 (Io)（每個二極管）:5A 電壓 - (Vr)（最大）:600V 反向恢復時間(trr):50ns 二極管類型:標準 速度:快速恢復 = 200mA（Io） 二極管配置:1 對共陰極 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D²Pak（2 引線+接片），TO-263AB 供應商設備封裝:D2PAK 包裝:帶卷 (TR) 產品目錄頁面:1553 (CN2011-ZH PDF) 其它名稱:497-10107-2 |
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