
Schottky Barrier Diodes (SBD)
MA3X715
(MA715)
Silicon epitaxial planar type
1
Publication date: January 2002
SKH00075BED
For high frequency rectification
I
Features
Low forward voltage V
F
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
Mini type 3-pin package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RM
30
V
Peak reverse voltage
30
V
Forward current (DC)
Single
I
F
30
mA
Series
20
Peak forward
Single
I
FM
150
mA
current
Series
110
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Internal Connection
Marking Symbol: M2Y
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F1
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 k
, C
L
=
10 pF
30
μ
A
Forward voltage (DC)
0.3
V
V
F2
C
t
t
rr
1.0
Terminal capacitance
1.5
pF
Reverse recovery time
*
1.0
ns
Detection efficiency
η
65
%
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
1
2
3
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3.*: t
rr
measuring instrument
Note) The part number in the parenthesis shows conventional part number.