
Schottky Barrier Diodes (SBD)
MA2J732
(MA732)
Silicon epitaxial planar type
1
Publication date: August 2001
SKH00016AED
For switching
For wave detection
I
Features
Low forward voltage V
F
, optimum for low voltage rectification
Low V
F
type of MA3X704A (MA704A)
Optimum for high frequency rectification because of its short re-
verse recovery time (t
rr
)
S-Mini type 2-pin package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RM
30
V
Peak reverse voltage
30
V
Peak forward current
I
FM
I
F
T
j
150
mA
Forward current (DC)
30
mA
Junction temperature
125
°
C
°
C
Storage temperature
T
stg
55 to
+
125
Marking Symbol: 2C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 k
, C
L
=
10 pF
30
μ
A
Forward voltage (DC)
V
F1
V
F2
C
t
t
rr
0.3
V
1.0
Terminal capacitance
1.5
pF
Reverse recovery time
*
1.0
ns
Detection efficiency
η
65
%
I
Electrical Characteristics
T
a
=
25
°
C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1 : Anode
2 : Cathode
EIAJ : SC-90A
SMini2-F1 Package
5
°
5
°
1.25
±0.1
0.7
±0.1
2
±
1
±
0
±
0
(
0.16
0.5
±0.1
1
2
+0.1
0.35
±0.1
0 to 0.1
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3.*: t
rr
measuring instrument
Note) The part number in the parenthesis shows conventional part number.