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參數(shù)資料
| 型號(hào)： | MA744 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | 0.2 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, SMINI3-F1, SC-79, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 43K |
| 代理商： | MA744 |
1
Schottky Barrier Diodes (SBD)
MA3J744
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I
Features
Small S-mini type package allowing high-density mounting
Allowing to rectify under (I
F(AV)
= 200 mA) condition
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RRM
30
V
Repetitive peak reverse voltage
30
V
Average forward current
I
F(AV)
I
FM
200
mA
Peak forward current
300
mA
Non-repetitive peak forward
surge current
*
I
FSM
1
A
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
1 : Anode
2 : NC
3 : Cathode
EIAJ : SC-70
Flat S- Mini Type Package (3-pin)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Marking Symbol: M1M
Internal Connection
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
I
F
= 200 mA
V
R
= 0 V, f
= 1 MHz
50
μ
A
Forward voltage (DC)
V
F
C
t
0.55
V
Terminal capacitance
30
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
3
ns
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : t
rr
measuring instrument
1.25
±
0.1
1
±
0
2
±
0
0
±
0
0
0
0.425
0.425
0
+
0
0
2.1
±
0.1
0
+
0
0
1
2
3
1
2
3
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
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PDF描述 |
|---|---|
| MA3J745D | Silicon epitaxial planar type |
| MA3J745 | Silicon epitaxial planar type |
| MA3S132A | Silicon epitaxial planar type |
| MA3S132E | Silicon epitaxial planar type |
| MA3S137 | Silicon epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA744TX | 制造商:Panasonic Industrial Company 功能描述: |
| MA745 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Schottky Barrier Diodes (SBD) |
| MA746 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA747C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual operational amplifier |
| MA747CN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual operational amplifier |
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