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參數資料
| 型號： | MA789 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes (SBD) |
| 中文描述： | 0.5 A, 60 V, SILICON, SIGNAL DIODE, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 62K |
| 代理商： | MA789 |
Schottky Barrier Diodes (SBD)
MA3X789
(MA789)
Silicon epitaxial planar type
1
Publication date: February 2002
SKH00089BED
For super high speed switching
For small current rectification
I
Features
I
F(AV)
=
500 mA rectification is possible
V
R
=
60 V is guaranteed
Mini type 3-pin package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: M3W
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RM
60
V
Peak reverse voltage
60
V
Average forward current
I
F(AV)
I
FSM
500
mA
Non-repetitive peak forward-
surge-current
*
2
A
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F
C
t
t
rr
V
R
=
50 V
I
F
=
500 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
100
μ
A
Forward voltage (DC)
0.65
V
Terminal capacitance
Reverse recovery time
*
60
pF
4.5
ns
I
Electrical Characteristics
T
a
=
25
°
C
Internal Connection
1
2
3
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 100 MHz
3.*: t
rr
measuring instrument
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) The part number in the parenthesis shows conventional part number.
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