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參數資料
| 型號： | MA862 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT, MINI4-G1, SC-61, 4 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 49K |
| 代理商： | MA862 |
1
Band Switching Diodes
MA4X862
Silicon epitaxial planar type
Unit : mm
Internal Connection
Marking Symbol: M1I
For band switching
I
Features
Two electrically isolated elements incorporated
Small diode capacitance C
D
Low forward dynamic resistance r
f
Optimum for a band switching of a tuner
I
Absolute Maximum Ratings
T
a
= 25
°
C
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
35
V
Forward current
Single
I
F
100
mA
(DC)
Double
75
mA/Unit
Operating ambient temperature
T
opr
25 to
+
85
55 to
+
100
°
C
°
C
Storage temperature
T
stg
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F
V
R
= 33 V
I
F
= 100 mA
V
R
= 6 V, f
= 1 MHz
I
F
= 2 mA, f
= 100 MHz
100
nA
Forward voltage (DC)
1.0
V
Diode capacitance
C
D
r
f1*1
r
f2*2
1.2
pF
Forward dynamic resistance
0.65
0.98
I
Electrical Characteristics
T
a
= 25
°
C
Note) 1 Rated input/output frequency: 100 MHz
2 *1 : r
f
measuring instrument: Nihon Koshuha Model TDC-121A
*2 : r
f
measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
4
3
1
2
2.8
+
0.2
0.3
1.5
+
0.25
0.05
0.65
±
0.15
0.65
±
0.15
0.5 R
1
2
4
3
0
0
1
±
0
0
+
0
0
1
+
0
0
0
0.4
±
0.2
0
0
+
0
0
0
+
0
0
0
0
+
0
0
1
0.1 to 0.3
0
2
+
0
0
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|---|---|
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