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參數資料
| 型號： | MAAM-007524-DIE000 |
| 元件分類： | 放大器 |
| 英文描述： | 10000 MHz - 15400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 247K |
| 代理商： | MAAM-007524-DIE000 |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Amplifier, Driver
10.0—15.4 GHZ
M/A-COM Products
RoHS Compliant
MAAM-007524-DIE000
Part Status: Preliminary
Rev. A
Features
18 dB Typical Gain
Good Input and Output Return Losses
Good Gain Flatness over Individual Bands
Designed for Linear Applications
5 to 8 Volt Single-Bias Operation
Description
The MAAM-007524-DIE000 is a 3-stage driver amplifier with on-chip
bias networks for cellular and VSAT applications. The input and output
ports are matched to 50 ohms and are DC blocked. The MMIC can be
used as a broadband amplifier stage or as a driver stage in high power
applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG) Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
Point-to-Point Radio Links
10, 11, 13 and 15 GHz Bands
Satellite Communications
VSAT
Parameter
Symbol
Typical
Units
Bandwidth
f
10.0-15.4
GHz
Small Signal Gain
G
18
dB
Input VSWR
VSWR
3:1
—
Output VSWR
VSWR
2:1
—
Noise Figure
NF
5
dB
1-dB Compression Point
P1dB
18
dBm
Output Third Order Intercept
Single Carrier Level = 5dBm
IP3
32
dBm
Electrical Characteristics: TB = 25°C
1, Z
0 = 50Ω, VDD = 8V, IDQ = 150 mA
1.
TB = MMIC Base Temperature.
Ordering Information:
Description
Plastic Package
Plastic Sample Board
Part Number
MAAM-007524-PKG003
MAAM-07524-SMB003
Die Sample Board
MAAM-007524-SMB004
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