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參數(shù)資料
型號(hào): MAAPGM0019-DIE
元件分類(lèi): 放大器
英文描述: 9500 MHz - 13000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 2.98 X 2.98 MM, 0.075 MM HEIGHT, DIE
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 292K
代理商: MAAPGM0019-DIE
1.6W X/Ku-Band Power Amplifier
9.5-13.0 GHz
MAAPGM0019-DIE
9.5-13.0 GHz GaAs MMIC Amplifier
RO-P-DS-3038 - -
Preliminary Information
Features
9.5-13.0 GHz Operation
1.6 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG MESFET Process
Primary Applications
11 GHz Point-to-Point Radio
13 GHz Point-to-Point Radio
Description
The MAAPGM0019-Die is a 3-stage 1.6 W power amplifier
with on-chip bias networks. This product is fully matched to
50 ohms on both the input and output. It can be used as a
power amplifier stage or as a driver stage in high power
applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG) MESFET
Process. This process features silicon oxynitride
passivation and polyimide scratch protection.
Electrical Characteristics: TB = 40°C
1, Z0 = 50, VDD = 8V, VGG = -2V, Pin = 20 dBm
1. TB = MMIC Base Temperature
Parameter
Symbol
Typical
Units
Bandwidth
f
9.5-13.0
GHz
Output Power
POUT
32
dBm
Power Added Efficiency
PAE
23
%
1-dB Compression Point
P1dB
31
dBm
Small Signal Gain
G
19
dB
Input VSWR
VSWR
2.5:1
Gate Current
IGG
<10
mA
Drain Current
IDD
<1.1
A
Output Third Order Intercept
OTOI
38
dBm
Noise Figure
NF
10
dB
2nd Harmonic
2f
-37
dBc
3rd Harmonic
3f
-40
dBc
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