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參數資料
| 型號： | MAC08BT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIAC 0.8 AMPERE RMS 200 thru 600 Volts |
| 中文描述： | 200 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | CASE 318E, 4 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 205K |
| 代理商： | MAC08BT1 |
3–40
Motorola Thyristor Device Data
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and other light
industrial or consumer applications. Supplied in surface mount package for use in
automated manufacturing.
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Devices Supplied on 1 K Reel
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Blocking Voltage(1)
(1/2 Sine Wave, Gate Open, TJ = 25 to 110
°
C)
MAC08BT1
MAC08DT1
MAC08MT1
VDRM
200
400
600
Volts
On-State Current RMS (TC = 80
°
C)
IT(RMS)
0.8
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25
°
C)
ITSM
10
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.4
A2s
Peak Gate Power (t < 2.0
μ
s)
PGM
PG(AV)
TJ
Tstg
TL
5.0
Watts
Average Gate Power (TC = 80
°
C, t = 8.3 ms)
Operating Junction Temperature Range
0.1
Watts
–40 to +110
°
C
Storage Temperature Range
–40 to +150
°
C
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum)
260
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
R
θ
JA
156
°
C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
R
θ
JT
25
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
TRIAC
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04
(SOT-223)
STYLE 11
*Motorola preferred devices
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MAC08MT1 | SENSITIVE GATE TRIACS |
| MAC08DT1 | TRIAC 0.8 AMPERE RMS 200 thru 600 Volts |
| MAC08MT1 | TRIAC 0.8 AMPERE RMS 200 thru 600 Volts |
| MAC12 | TRIACS 12 AMPERES RMS 400 thru 800 VOLTS |
| MAC12HCD | Triacs Silicon Bidirectional Thyristors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MAC08BT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC08BT1G | 功能描述:雙向可控硅 THY .8A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC08DT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TRIAC 0.8 AMPERE RMS 200 thru 600 Volts |
| MAC08M | 制造商:ON SEM 功能描述: |
| MAC08MT1 | 功能描述:雙向可控硅 THY .8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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