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參數(shù)資料
| 型號： | MAC15FP |
| 廠商： | Motorola, Inc. |
| 英文描述： | ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS |
| 中文描述： | 隔震可控硅晶閘管15安培RMS的200通過800伏 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | MAC15FP |
3–59
Motorola Thyristor Device Data
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes
(MAC15A Series)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = –40 to +125
°
C)
MAC15-4, MAC15A4
MAC15-6, MAC15A6
MAC15-8, MAC15A8
MAC15-10, MAC15A10
VDRM
200
400
600
800
Volts
Peak Gate Voltage
VGM
IT(RMS)
10
Volts
On-State Current RMS
Full Cycle Sine Wave 50 to 60 Hz (TC = +90
°
C)
15
Amps
Circuit Fusing (t = 8.3 ms)
I2t
93
A2s
Peak Surge Current
(One Full Cycle, 60 Hz, TC = +80
°
C)
Preceded and followed by rated current
ITSM
150
Amps
Peak Gate Power (TC = +80
°
C, Pulse Width = 2
μ
s)
Average Gate Power (TC = +80
°
C, t = 8.3 ms)
Peak Gate Current
PGM
PG(AV)
IGM
TJ
Tstg
20
Watts
0.5
Watt
2
Amps
Operating Junction Temperature Range
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SEMICONDUCTOR TECHNICAL DATA
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
15 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
REV 1
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| MAC15-4 | TRIACs 15 AMPERES RMS 200 thru 800 VOLTS |
| MAC15-6 | TRIACs 15 AMPERES RMS 200 thru 800 VOLTS |
| MAC15-8 | TRIACs 15 AMPERES RMS 200 thru 800 VOLTS |
| MAC15A4 | TRIACs 15 AMPERES RMS 200 thru 800 VOLTS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC15M | 功能描述:雙向可控硅 THY FP 15A 600V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC15MG | 功能描述:雙向可控硅 THY FP 15A 600V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC15N | 功能描述:雙向可控硅 THY FP 15A 800V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC15NG | 功能描述:雙向可控硅 THY FP 15A 800V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC15S | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
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