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參數資料
| 型號： | MAC4DHM-001 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | PLASTIC, CASE 369D-01, DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 131K |
| 代理商： | MAC4DHM-001 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1997
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Four–Quadrant Triggering
Blocking Voltage to 600 V
On–State Current Rating of 4.0 Amperes RMS at 93
°
C
Low Level Triggering and Holding Characteristics
ORDERING INFORMATION
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DHM
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DHMT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DHM–1
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 110
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC4DHM
MAC4DLM
VDRM
600
600
Volts
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 93
°
C)
IT(RMS)
4.0
Amps
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 110
°
C)
ITSM
40
Circuit Fusing Consideration (t = 8.3 msec)
I2t
6.6
A2sec
Peak Gate Power
(Pulse Width
≤
10 sec, TC = 93
°
C)
PGM
0.5
Watts
Average Gate Power
(t = 8.3 msec, TC = 93
°
C)
PG(AV)
0.1
Peak Gate Current (Pulse Width
≤
10
sec, TC = 93
°
C)
Peak Gate Voltage (Pulse Width
≤
10
sec, TC = 93
°
C)
Operating Junction Temperature Range
IGM
VGM
TJ
Tstg
0.2
Amps
5.0
Volts
–40 to 110
°
C
Storage Temperature Range
–40 to 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
RJC
RJA
RJA
TL
3.5
88
80
°
C/W
Maximum Lead Temperature for Soldering Purposes (3)
260
°
C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8
″
from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC4DHM/D
SEMICONDUCTOR TECHNICAL DATA
TRIACS
4.0 AMPERES RMS
600 VOLTS
CASE 369A–13
STYLE 6
MT2
MT1
G
MT2
G
MT2
MT1
Motorola Preferred Devices
相關PDF資料 |
PDF描述 |
|---|---|
| MAC4DHMT4 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLM-001 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLMT4 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DHM | TRIACS 4.0 AMPERES RMS 600 VOLTS |
| MAC4DSM | TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MAC4DHM-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DHM-1G | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DHMT4 | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DHMT4G | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DLM | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
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