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參數資料
| 型號： | MAC4DHMT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | LEAD FREE, PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 86K |
| 代理商： | MAC4DHMT4G |
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 5
1
Publication Order Number:
MAC4DHM/D
MAC4DHM
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
FourQuadrant Triggering
Blocking Voltage to 600 V
OnState Current Rating of 4.0 A RMS at 93
°
C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
J
= 40 to 110
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
V
DRM,
V
RRM
600
V
OnState RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 93
°
C)
I
T(RMS)
4.0
A
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
J
= 110
°
C)
I
TSM
40
A
Circuit Fusing Consideration (t = 8.3 msec)
I
2
t
6.6
A
2
sec
Peak Gate Power
(Pulse Width
≤
10 sec, T
C
= 93
°
C)
P
GM
0.5
W
Average Gate Power
(t = 8.3 msec, T
C
= 93
°
C)
P
G(AV)
0.1
W
Peak Gate Current
(Pulse Width
≤
10
sec, T
C
= 93
°
C)
I
GM
0.2
A
Peak Gate Voltage
(Pulse Width
≤
10
sec, T
C
= 93
°
C)
V
GM
5.0
V
Operating Junction Temperature Range
T
J
40 to 110
°
C
Storage Temperature Range
T
stg
40 to 150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
TRIACS
4.0 AMPERES RMS
600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
Main Terminal 1
1
2
3
Gate
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK3
CASE 369D
STYLE 6
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
Y
WW
AC4DHM = Device Code
G
= PbFree Package
= Year
= Work Week
1 2
3
4
YWW
AC
4DHMG
1
23
4
YWW
AC
4DHMG
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| MAC4DLM-001G | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLMT4G | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MAC4DLM | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLM_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLM-001 | 功能描述:THYRISTOR TRIAC 4A 600V IPAK RoHS:否 類別:分離式半導體產品 >> 三端雙向可控硅開關 系列:- 標準包裝:1 系列:- 三端雙向可控硅開關類型:邏輯 - 靈敏柵極 電壓 - 斷路:800V 電流 - 導通狀態 (It (RMS))（最大）:6A 電壓 - 柵極觸發器 (Vgt)（最大）:1.5V 電流 - 非重復電涌，50、60Hz (Itsm):* 電流 - 柵極觸發電流 (Igt)（最大）:10mA 電流 - 維持(Ih):25mA 配置:單一 安裝類型:* 封裝/外殼:* 供應商設備封裝:* 包裝:* 其它名稱:568-9616-6 |
| MAC4DLM-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLM-1G | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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