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參數資料
| 型號： | MAC4DSN |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS |
| 中文描述： | 800 V, 4 A, TRIAC |
| 文件頁數： | 1/8頁 |
| 文件大小： | 158K |
| 代理商： | MAC4DSN |
1
Motorola Thyristor Device Data
Motorola, Inc. 1997
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On–State Current Rating of 4.0 Amperes RMS at 108
°
C
Low IGT — 10 mA Maximum in 3 Quadrants
High Immunity to dv/dt — 50 V/ s at 125
°
C
ORDERING INFORMATION
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DSNT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DSN–1
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 125
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC4DSM
MAC4DSN
VDRM
600
800
Volts
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 108
°
C)
IT(RMS)
4.0
Amps
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125
°
C)
ITSM
40
Circuit Fusing Consideration (t = 8.3 msec)
I2t
6.6
A2sec
Peak Gate Power
(Pulse Width
≤
10 sec, TC = 108
°
C)
PGM
0.5
Watts
Average Gate Power
(t = 8.3 msec, TC = 108
°
C)
PG(AV)
0.1
Peak Gate Current (Pulse Width
≤
10
sec, TC = 108
°
C)
Peak Gate Voltage (Pulse Width
≤
10
sec, TC = 108
°
C)
Operating Junction Temperature Range
IGM
VGM
TJ
Tstg
0.2
Amps
5.0
Volts
–40 to 125
°
C
Storage Temperature Range
–40 to 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
RJC
RJA
RJA
TL
3.5
88
80
°
C/W
Maximum Lead Temperature for Soldering Purposes (3)
260
°
C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8
″
from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC4DSM/D
SEMICONDUCTOR TECHNICAL DATA
TRIACS
4.0 AMPERES RMS
600 thru 800 VOLTS
CASE 369A–13
STYLE 6
MT2
MT1
G
MT2
G
MT2
MT1
Motorola Preferred Devices
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MAC4DSN-001 | 功能描述:THYRISTOR TRIAC 4A 800V IPAK RoHS:否 類別:分離式半導體產品 >> 三端雙向可控硅開關 系列:- 標準包裝:1 系列:- 三端雙向可控硅開關類型:邏輯 - 靈敏柵極 電壓 - 斷路:800V 電流 - 導通狀態 (It (RMS))（最大）:6A 電壓 - 柵極觸發器 (Vgt)（最大）:1.5V 電流 - 非重復電涌，50、60Hz (Itsm):* 電流 - 柵極觸發電流 (Igt)（最大）:10mA 電流 - 維持(Ih):25mA 配置:單一 安裝類型:* 封裝/外殼:* 供應商設備封裝:* 包裝:* 其它名稱:568-9616-6 |
| MAC4DSN-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| MAC4DSN-1G | 功能描述:雙向可控硅 THY 4A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DSNT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| MAC4DSNT4G | 功能描述:雙向可控硅 THY 4A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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