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| 型號(hào)： | MAC4DSNT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 800 V, 4 A, TRIAC |
| 封裝： | LEAD FREE, PLASTIC, CASE 369C, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 92K |
| 代理商： | MAC4DSNT4G |
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 5
1
Publication Order Number:
MAC4DSM/D
MAC4DSM, MAC4DSN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
OnState Current Rating of 4.0 Amperes RMS at 108
°
C
Low IGT 10 mA Maximum in 3 Quadrants
High Immunity to dv/dt 50 V/ s at 125
°
C
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage
(Note 1) (T
J
= 40 to 125
°
C, Sine
Wave, 50 to 60 Hz, Gate Open)
MAC4DSM
MAC4DSN
V
DRM,
V
RRM
600
800
V
OnState RMS Current
(Full Cycle Sine Wave, 60 Hz,
T
C
= 108
°
C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 125
°
C)
Circuit Fusing Consideration
(t = 8.3 msec)
I
T(RMS)
4.0
A
I
TSM
40
A
I
2
t
6.6
A
2
sec
Peak Gate Power
(Pulse Width
≤
10 sec, T
C
= 108
°
C)
Average Gate Power
(t = 8.3 msec, T
C
= 108
°
C)
P
GM
0.5
W
P
G(AV)
0.1
W
Peak Gate Current
(Pulse Width
≤
10
sec, T
C
= 108
°
C)
Peak Gate Voltage
(Pulse Width
≤
10
sec, T
C
= 108
°
C)
Operating Junction Temperature Range
I
GM
0.2
A
V
GM
5.0
V
T
J
T
stg
40 to 125
°
C
°
C
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
40 to 150
TRIACS
4.0 AMPERES RMS
600 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
DPAK3
CASE 369D
STYLE 6
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
Y
WW
AC4DSx
= Year
= Work Week
= Device Code
x= M or N
= PbFree Package
G
1 2
3
4
YWW
AC
4DSxG
1
23
4
YWW
AC
4DSxG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
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| MAC4M | TRIACS, Silicon Bidirectional Thyristors |
| MAC4N | TRIACS, Silicon Bidirectional Thyristors |
| MAC8D | Triac (Silicon Bidirectional Thyristor)(導(dǎo)通RMS電流8A,重復(fù)截止峰值電壓400V的雙向可控硅) |
| MAC8M | Triac (Silicon Bidirectional Thyristor)(導(dǎo)通RMS電流8A,重復(fù)截止峰值電壓600V的雙向可控硅) |
| MAC8N | Triac (Silicon Bidirectional Thyristor)(導(dǎo)通RMS電流8A,重復(fù)截止峰值電壓800V的雙向可控硅) |
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